Chip substrate resistance modeling technique for integrated circuit design TA Johnson, RW Knepper, V Marcello, W Wang
IEEE transactions on computer-aided design of integrated circuits and …, 1984
112 1984 Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface RK Cook, RW Knepper, SK Kulkarni, RC Lange, PA Ronsheim, ...
US Patent 5,194,397, 1993
64 1993 Method for forming a narrow channel length MOS field effect transistor WS Johnson, RW Knepper
US Patent 4,078,947, 1978
42 1978 Enhancement/depletion mode field effect transistor driver RW Knepper
US Patent 4,071,783, 1978
42 1978 Advanced bipolar transistor modeling: Process and device simulation tools for today's technology RW Knepper, SP Gaur, FY Chang, GR Srinivasan
IBM journal of research and development 29 (3), 218-228, 1985
32 1985 Two-dimensional process modeling: A description of the SAFEPRO program RR O'Brien, CM Hsieh, JS Moore, RF Lever, PC Murley, KW Brannon, ...
IBM journal of research and development 29 (3), 229-241, 1985
27 1985 A 300-V LDMOS analog-multiplexed driver for MEMS devices S Dai, RW Knepper, MN Horenstein
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (12), 2806-2816, 2015
25 2015 High speed DRAM local bit line sense amplifier RH Dennard, RW Knepper
US Patent 6,426,905, 2002
24 2002 Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming SA Abbas, CS Chang, LB Freeman Jr, RW Knepper
US Patent 3,961,355, 1976
24 1976 A low-noise, wideband preamplifier for a Fourier-transform ion cyclotron resonance mass spectrometer R Mathur, RW Knepper, PB O’Connor
Journal of the American Society for Mass Spectrometry 18 (12), 2233-2241, 2007
22 2007 Read only memory including an isolation network connected between the array of memory cells and the output sense amplifier whereby reading speed is enhanced RD Kimmel, RW Knepper, R Levi
US Patent 4,651,302, 1987
21 1987 A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy SE Fischer, RK Cook, RW Knepper, RC Lange, K Nummy, DC Ahlgren, ...
International Technical Digest on Electron Devices Meeting, 890-892, 1989
19 1989 Dynamic depletion mode: An E/D mosfet circuit method for improved performance RW Knepper
IEEE Journal of Solid-State Circuits 13 (5), 542-548, 1978
18 1978 Vertical-gate CMOS compatible lateral bipolar transistor CM Hsieh, LLG Hsu, SN Mei, RW Knepper, LF Wagner Jr
US Patent 5,446,312, 1995
13 1995 Differential Sensing of Substrate Noise in Mixed-Signal 0.18- BiCMOS Technology H Dai, RW Knepper
IEEE electron device letters 29 (8), 898-901, 2008
12 2008 A low-noise broadband cryogenic preamplifier operated in a high-field superconducting magnet R Mathur, RW Knepper, PB O'Connor
IEEE transactions on applied superconductivity 18 (4), 1781-1789, 2008
11 2008 Method of forming a novel vertical-gate CMOS compatible lateral bipolar transistor CM Hsieh, LLG Hsu, SN Mei, RW Knepper, LF Wagner Jr
US Patent 5,371,022, 1994
11 1994 Field effect transistor (FET) circuit utilizing substrate potential for turning off depletion mode devices RW Knepper
US Patent 4,093,875, 1978
11 1978 Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance WS Johnson, RW Knepper
US Patent 4,350,991, 1982
10 1982 Modeling and Experimental Measurement of Active Substrate-Noise Suppression in Mixed-Signal 0.18- BiCMOS Technology H Dai, RW Knepper
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2009
9 2009