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YU-HUNG LIAO
YU-HUNG LIAO
E-mail confirmado em berkeley.edu
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Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
1832022
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles
AJ Tan, YH Liao, LC Wang, N Shanker, JH Bae, C Hu, S Salahuddin
IEEE Electron Device Letters 42 (7), 994-997, 2021
1562021
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
D Kwon, S Cheema, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ...
IEEE Electron Device Letters 40 (6), 993-996, 2019
1312019
Proposal for capacitance matching in negative capacitance field-effect transistors
H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, A Dasgupta, ...
IEEE Electron Device Letters 40 (3), 463-466, 2019
842019
Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ...
IEEE Electron Device Letters 41 (2), 240-243, 2019
622019
Negative capacitance, n-channel, Si FinFETs: Bi-directional sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect
H Zhou, D Kwon, AB Sachid, Y Liao, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 53-54, 2018
542018
Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs
AJ Tan, M Pešić, L Larcher, YH Liao, LC Wang, JH Bae, C Hu, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
482020
Analysis and modeling of inner fringing field effect on negative capacitance FinFETs
YK Lin, H Agarwal, P Kushwaha, MY Kao, YH Liao, K Chatterjee, ...
IEEE Transactions on Electron Devices 66 (4), 2023-2027, 2019
482019
Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack
D Kwon, S Cheema, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ...
IEEE Electron Device Letters 41 (1), 179-182, 2019
472019
Spacer engineering in negative capacitance FinFETs
YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ...
IEEE Electron Device Letters 40 (6), 1009-1012, 2019
452019
NCFET design considering maximum interface electric field
H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, JP Duarte, ...
IEEE Electron Device Letters 39 (8), 1254-1257, 2018
452018
Response speed of negative capacitance FinFETs
D Kwon, YH Liao, YK Lin, JP Duarte, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 49-50, 2018
442018
Variation caused by spatial distribution of dielectric and ferroelectric grains in a negative capacitance field-effect transistor
MY Kao, AB Sachid, YK Lin, YH Liao, H Agarwal, P Kushwaha, JP Duarte, ...
IEEE Transactions on Electron Devices 65 (10), 4652-4658, 2018
412018
Fast read-after-write and depolarization fields in high endurance n-type ferroelectric FETs
M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (5), 717-720, 2022
332022
Anomalously beneficial gate-length scaling trend of negative capacitance transistors
YH Liao, D Kwon, YK Lin, AJ Tan, C Hu, S Salahuddin
IEEE Electron Device Letters 40 (11), 1860-1863, 2019
312019
Optimization of NCFET by matching dielectric and ferroelectric nonuniformly along the channel
MY Kao, YK Lin, H Agarwal, YH Liao, P Kushwaha, A Dasgupta, ...
IEEE Electron Device Letters 40 (5), 822-825, 2019
242019
Effect of polycrystallinity and presence of dielectric phases on NC-FinFET variability
YK Lin, MY Kao, H Agarwal, YH Liao, P Kushwaha, K Chatterjee, ...
2018 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2018
192018
Electric field-induced permittivity enhancement in negative-capacitance FET
YH Liao, D Kwon, S Cheema, N Shanker, AJ Tan, MY Kao, LC Wang, ...
IEEE Transactions on Electron Devices 68 (3), 1346-1351, 2021
132021
Negative-capacitance FinFETs: Numerical simulation, compact modeling and circuit evaluation
JP Duarte, YK Lin, YH Liao, A Sachid, MY Kao, H Agarwal, P Kushwaha, ...
2018 International conference on simulation of semiconductor processes and …, 2018
122018
Write disturb-free ferroelectric FETs with non-accumulative switching dynamics
M Hoffmann, AJ Tan, N Shanker, YH Liao, LC Wang, JH Bae, C Hu, ...
IEEE Electron Device Letters 43 (12), 2097-2100, 2022
92022
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