Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm C Navarro, S Karg, C Marquez, S Navarro, C Convertino, C Zota, ... Nature Electronics 2 (9), 412-419, 2019 | 37 | 2019 |
Experimental Demonstration of Operational Z2-FET Memory Matrix S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ... IEEE Electron Device Letters 39 (5), 660-663, 2018 | 32 | 2018 |
Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation C Marquez, N Rodriguez, F Gamiz, R Ruiz, A Ohata Solid-State Electronics 117, 60-65, 2016 | 25 | 2016 |
Electrical characterization and conductivity optimization of laser reduced graphene oxide on insulator using point-contact methods C Marquez, N Rodriguez, R Ruiz, F Gamiz Rsc Advances 6 (52), 46231-46237, 2016 | 24 | 2016 |
Experimental developments of A2RAM memory cells on SOI and bulk substrates N Rodriguez, F Gamiz, C Navarro, C Marquez, F Andrieu, O Faynot, ... Solid-State Electronics 103, 7-14, 2015 | 22 | 2015 |
InGaAs capacitor-less DRAM cells TCAD demonstration C Navarro, S Navarro, C Marquez, L Donetti, C Sampedro, S Karg, H Riel, ... IEEE Journal of the Electron Devices Society 6, 884-892, 2018 | 17 | 2018 |
Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell S Navarro, C Navarro, C Marquez, N Salazar, P Galy, S Cristoloveanu, ... IEEE Electron Device Letters 40 (7), 1084-1087, 2019 | 16 | 2019 |
Investigating the transient response of Schottky barrier back-gated MoS2 transistors C Marquez, N Salazar, F Gity, C Navarro, G Mirabelli, JC Galdon, R Duffy, ... 2D Materials 7 (2), 025040, 2020 | 15 | 2020 |
3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs C Navarro, S Navarro, C Marquez, JL Padilla, P Galy, F Gamiz IEEE Transactions on Electron Devices 66 (6), 2513-2519, 2019 | 14 | 2019 |
Dual PN source/drain reconfigurable FET for fast and low-voltage reprogrammable logic C Navarro, C Marquez, S Navarro, F Gamiz IEEE Access 8, 132376-132381, 2020 | 12 | 2020 |
Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power C Navarro, C Marquez, S Navarro, C Lozano, S Kwon, YT Kim, F Gamiz IEEE Access 7, 40279-40284, 2019 | 12 | 2019 |
Gate leakage tunneling impact on the InAs/GaSb heterojunction electron–Hole Bilayer tunneling field-effect transistor JL Padilla, C Medina-Bailon, C Marquez, C Sampedro, L Donetti, F Gamiz, ... IEEE Transactions on Electron Devices 65 (10), 4679-4686, 2018 | 11 | 2018 |
On the effective mobility extraction by point-contact techniques on silicon-on-insulator substrates C Fernandez, N Rodriguez, C Marquez, A Ohata, F Allibert Journal of Applied Physics 117 (3), 2015 | 10 | 2015 |
Towards InGaAs MSDRAM capacitor-less cells C Navarro, S Navarro, C Marquez, C Sampedro, L Donetti, S Karg, H Riel, ... ECS Transactions 85 (8), 195, 2018 | 9 | 2018 |
Evaluation of thin-oxide Z2-FET DRAM cell S Navarro, KH Lee, C Marquez, C Navarro, M Parihar, H Park, P Galy, ... 2018 Joint International EUROSOI Workshop and International Conference on …, 2018 | 9 | 2018 |
Systematic method for electrical characterization of random telegraph noise in MOSFETs C Marquez, N Rodriguez, F Gamiz, A Ohata Solid-State Electronics 128, 115-120, 2017 | 9 | 2017 |
DFT-based layered dielectric model of few-layer MoS2 L Donetti, C Navarro, C Marquez, C Medina-Bailon, JL Padilla, F Gamiz Solid-State Electronics 194, 108346, 2022 | 7 | 2022 |
Threshold voltage and on-current variability related to interface traps spatial distribution V Velayudhan, J Martín-Martínez, M Porti, C Couso, R Rodríguez, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 230-233, 2015 | 7 | 2015 |
Improved inter-device variability in graphene liquid gate sensors by laser treatment J Ávila, JC Galdon, MI Recio, N Salazar, C Navarro, C Marquez, F Gamiz Solid-State Electronics 192, 108259, 2022 | 6 | 2022 |
On the Low-Frequency Noise Characterization of Z2-FET Devices C Marquez, C Navarro, S Navarro, JL Padilla, L Donetti, C Sampedro, ... IEEE Access 7, 42551-42556, 2019 | 6 | 2019 |