Md Rezaul Karim

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Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUE-mail confirmado em osu.edu
Zixuan FengThe Ohio State UniversityE-mail confirmado em osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityE-mail confirmado em osu.edu
Menglin Zhu [ORCID: 0000-0001-683...Postdoctoral Researcher, MITE-mail confirmado em mit.edu
Anhar BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellE-mail confirmado em uml.edu
Jared M JohnsonThe Ohio State UniversityE-mail confirmado em thermofisher.com
Leonard BrillsonThe Ohio State UniversityE-mail confirmado em osu.edu
Kathleen KashProfessor of Physics, Case Western Reserve UniversityE-mail confirmado em case.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityE-mail confirmado em ece.osu.edu
Shreyas MuralidharanGraduate Student, Stanford UniversityE-mail confirmado em stanford.edu
David LookSenior Research Physicist, Wright State UniversityE-mail confirmado em wright.edu
Lei R. CaoProfessor, The Ohio State UniversityE-mail confirmado em osu.edu
Hsien-Lien Huang [ORCID:0000-0001...The Ohio State UniversityE-mail confirmado em osu.edu
Yuxuan ZhangFinwave Semiconductor Inc.E-mail confirmado em finwavesemi.com
Baishakhi MazumderUniversity at BuffaloE-mail confirmado em buffalo.edu
Shanthi Iyer alias E.ShanthiProfessor, Nanoengineering, Joint School of Nanoscience and NanoengineeringE-mail confirmado em ncat.edu
Jith SarkerFraunhofer USA Inc.E-mail confirmado em fraunhofer.org
Walter LambrechtPerkins Professor of Physics, Case Western Reserve UniversityE-mail confirmado em case.edu
Estiak AhmadIntel CorporationE-mail confirmado em intel.com
Yang Liu3ME-mail confirmado em mmm.com

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Md Rezaul Karim

Intel Corporation

E-mail confirmado em osu.edu

II-IV-nitrides III-nitrides oxide semiconductors thin film and nanowire growth LEDs


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MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019	286	2019
Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018	143	2018
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied Physics Letters 112 (5), 2018	119	2018
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	116	2020
High-temperature low-pressure chemical vapor deposition of β-Ga2O3 Y Zhang, Z Feng, MR Karim, H Zhao Journal of Vacuum Science & Technology A 38 (5), 2020	50	2020
Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters Z Feng, MR Karim, H Zhao APL Materials 7 (2), 2019	50	2019
A two-step growth pathway for high Sb incorporation in GaAsSb nanowires in the telecommunication wavelength range E Ahmad, MR Karim, SB Hafiz, CL Reynolds, Y Liu, S Iyer Scientific reports 7 (1), 10111, 2017	44	2017
Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Y Zhang, Z Chen, W Li, H Lee, MR Karim, AR Arehart, SA Ringel, S Rajan, ... Journal of Applied Physics 127 (21), 2020	31	2020
Deep level defects and cation sublattice disorder in ZnGeN2 MS Haseman, MR Karim, D Ramdin, BA Noesges, E Feinberg, ... Journal of Applied Physics 127 (13), 2020	30	2020
Metal–Organic Chemical Vapor Deposition Growth of ZnGeN₂ Films on Sapphire MR Karim, BHD Jayatunga, Z Feng, K Kash, H Zhao Crystal Growth & Design 19 (8), 4661-4666, 2019	28	2019
Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes MR Karim, H Zhao Journal of applied physics 124 (3), 2018	27	2018
Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In₂O₃ Films MR Karim, Z Feng, H Zhao Crystal Growth & Design 18 (8), 4495-4502, 2018	27	2018
Te incorporation in GaAs1− xSbx nanowires and pin axial structure E Ahmad, PK Kasanaboina, MR Karim, M Sharma, CL Reynolds, Y Liu, ... Semiconductor Science and Technology 31 (12), 125001, 2016	26	2016
Pitch-Induced bandgap tuning in self-catalyzed growth of patterned GaAsSb axial and GaAs/GaAsSb core–shell nanowires using molecular beam epitaxy M Sharma, MR Karim, P Kasanaboina, J Li, S Iyer Crystal Growth & Design 17 (2), 730-737, 2017	25	2017
Neutron irradiation and forming gas anneal impact on β-Ga2O3 deep level defects H Gao, S Muralidharan, MR Karim, SM White, LR Cao, K Leedy, H Zhao, ... Journal of Physics D: Applied Physics 53 (46), 465102, 2020	19	2020
Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition MR Karim, Z Chen, Z Feng, HL Huang, JM Johnson, MJ Tadjer, J Hwang, ... Journal of Vacuum Science & Technology A 39 (2), 2021	17	2021
-Ga₂O₃NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection XQ Zheng, J Lee, S Rafique, MR Karim, L Han, H Zhao, CA Zorman, ... IEEE Electron Device Letters 39 (8), 1230-1233, 2018	17	2018
Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition MR Karim, BHD Jayatunga, M Zhu, RA Lalk, O Licata, B Mazumder, ... AIP Advances 10 (6), 2020	15	2020
Low-Pressure Chemical Vapor Deposition of In₂O₃ Films on Off-Axis c-Sapphire Substrates MR Karim, Z Feng, JM Johnson, M Zhu, J Hwang, H Zhao Crystal Growth & Design 19 (3), 1965-1972, 2019	14	2019
Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films’”[APL Mater. 8, 089101 (2020)] AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (8), 2020	13	2020

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