| Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels A Matulionis, J Liberis, E Šermukšnis, J Xie, JH Leach, M Wu, H Morkoç Semiconductor science and technology 23 (7), 075048, 2008 | 60 | 2008 |
| Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ... Applied Physics Letters 95 (22), 2009 | 57 | 2009 |
| Ultrafast removal of LO-mode heat from a GaN-based two-dimensional channel A Matulionis, J Liberis, I Matulioniene, M Ramonas, E Sermuksnis Proceedings of the IEEE 98 (7), 1118-1126, 2009 | 52 | 2009 |
| Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels A Matulionis, J Liberis, I Matulionienė, M Ramonas, E Šermukšnis, ... Applied Physics Letters 95 (19), 2009 | 47 | 2009 |
| Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ... Applied Physics Letters 96 (13), 2010 | 41 | 2010 |
| InAlN‐barrier HFETs with GaN and InGaN channels J Liberis, I Matulionienė, A Matulionis, E Šermukšnis, J Xie, JH Leach, ... physica status solidi (a) 206 (7), 1385-1395, 2009 | 33 | 2009 |
| Hot-electron energy relaxation time in Ga-doped ZnO films E Šermukšnis, J Liberis, M Ramonas, A Matulionis, M Toporkov, HY Liu, ... Journal of Applied Physics 117 (6), 2015 | 31 | 2015 |
| Microwave noise technique for measurement of hot-electron energy relaxation time and hot-phonon lifetime E Šermukšnis Lithuanian Journal of Physics and Technical Sciences 47 (4), 491-498, 2007 | 28 | 2007 |
| Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors A Matulionis, J Liberis, I Matulionienė, E Šermukšnis, JH Leach, M Wu, ... physica status solidi (a) 208 (1), 30-36, 2011 | 21 | 2011 |
| Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels L Ardaravičius, O Kiprijanovič, J Liberis, E Šermukšnis, A Matulionis, ... Semiconductor Science and Technology 30 (10), 105016, 2015 | 18 | 2015 |
| Window for better reliability of nitride heterostructure field effect transistors A Matulionis, J Liberis, E Šermukšnis, L Ardaravičius, A Šimukovič, ... Microelectronics Reliability 52 (9-10), 2149-2152, 2012 | 15 | 2012 |
| Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density E Šermukšnis, J Liberis, M Ramonas, A Matulionis, JH Leach, M Wu, ... Applied Physics Letters 99 (4), 2011 | 15 | 2011 |
| Hot-phonon lifetime in Al0. 23Ga0. 77N/GaN channels J Liberis, M Ramonas, E Šermukšnis, P Sakalas, N Szabo, M Schuster, ... Semiconductor Science and Technology 29 (4), 045018, 2014 | 13 | 2014 |
| High-field electron transport in doped ZnO L Ardaravičius, O Kiprijanovič, J Liberis, M Ramonas, E Šermukšnis, ... Materials Research Express 4 (6), 066301, 2017 | 11 | 2017 |
| Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel JH Leach, M Wu, H Morkoç, J Liberis, E Šermukšnis, M Ramonas, ... Journal of Applied Physics 110 (10), 2011 | 11 | 2011 |
| High‐performance BeMgZnO/ZnO heterostructure field‐effect transistors K Ding, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç, E Šermukšnis, ... physica status solidi (RRL)–Rapid Research Letters 14 (12), 2000371, 2020 | 10 | 2020 |
| Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation L Ardaravičius, O Kiprijanovič, M Ramonas, E Šermukšnis, J Liberis, ... Journal of Applied Physics 126 (18), 2019 | 10 | 2019 |
| Hot LO-phonon limited electron transport in ZnO/MgZnO channels E Šermukšnis, J Liberis, A Matulionis, V Avrutin, M Toporkov, Ü Özgür, ... Journal of Applied Physics 123 (17), 2018 | 9 | 2018 |
| Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels E Šermukšnis, J Liberis, A Matulionis, V Avrutin, R Ferreyra, Ü Özgür, ... Semiconductor Science and Technology 30 (3), 035003, 2015 | 9 | 2015 |
| Optical and electrical characteristics of InGaAsP MQW BH DFB laser diodes J Matukas, V Palenskis, C Pavasaris, E Sermuksnis, J Vysniauskas, ... Materials science forum 384, 91-94, 2002 | 9 | 2002 |
