Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
576 2019 Lattice instabilities in metallic elements G Grimvall, B Magyari-Köpe, V Ozoliņš, KA Persson
Reviews of Modern Physics 84 (2), 945, 2012
513 2012 Achieving direct band gap in germanium through integration of Sn alloying and external strain S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat
Journal of Applied Physics 113 (7), 2013
491 2013 HfSe2 and ZrSe2 : Two-dimensional semiconductors with native high-κ oxides MJ Mleczko, C Zhang, HR Lee, HH Kuo, B Magyari-Köpe, RG Moore, ...
Science advances 3 (8), e1700481, 2017
250 2017 Electronic correlation effects in reduced rutile TiO 2 within the LDA+ U method SG Park, B Magyari-Köpe, Y Nishi
Physical Review B 82 (11), 115109, 2010
234 2010 Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in for Resistive Switching Memory SG Park, B Magyari-Köpe, Y Nishi
IEEE Electron Device Letters 32 (2), 197-199, 2010
161 2010 Advances in non-volatile memory and storage technology Y Nishi, B Magyari-Kope
Woodhead Publishing, 2019
148 2019 GeSn technology: Extending the Ge electronics roadmap S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ...
2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2011
139 2011 Model of metallic filament formation and rupture in NiO for unipolar switching HD Lee, B Magyari-Köpe, Y Nishi
Physical Review B 81 (19), 193202, 2010
134 2010 ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels K Kamiya, M Young Yang, SG Park, B Magyari-Köpe, Y Nishi, M Niwa, ...
Applied Physics Letters 100 (7), 2012
118 2012 First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides B Magyari-Köpe, SG Park, HD Lee, Y Nishi
Journal of Materials Science 47, 7498-7514, 2012
104 2012 Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0. 7Ca0. 3MnO3 B Magyari-Köpe, M Tendulkar, SG Park, HD Lee, Y Nishi
Nanotechnology 22 (25), 254029, 2011
100 2011 Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ...
2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013
89 2013 Low-temperature crystal structure of perovskite: An ab initio total energy study B Magyari-Köpe, L Vitos, G Grimvall, B Johansson, J Kollar
Physical Review B 65 (19), 193107, 2002
83 2002 Self-diffusion rates in Al from combined first-principles and model-potential calculations N Sandberg, B Magyari-Köpe, TR Mattsson
Physical review letters 89 (6), 065901, 2002
79 2002 Theoretical prediction of low-energy crystal structures and hydrogen storage energetics in B Magyari-Köpe, V Ozoliņš, C Wolverton
Physical Review B 73 (22), 220101, 2006
75 2006 Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations L Zhao, S Clima, B Magyari-Köpe, M Jurczak, Y Nishi
Applied Physics Letters 107 (1), 2015
67 2015 A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Resistive Random Access Memory KH Xue, B Traore, P Blaise, LRC Fonseca, E Vianello, G Molas, ...
IEEE Transactions on Electron Devices 61 (5), 1394-1402, 2014
67 2014 Elastic anomalies in Ag-Zn alloys B Magyari-Köpe, G Grimvall, L Vitos
Physical Review B 66 (6), 064210, 2002
65 2002 Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories K Kamiya, MY Yang, T Nagata, SG Park, B Magyari-Koepe, T Chikyow, ...
Physical Review B 87 (15), 155201, 2013
63 2013