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Peter Zory
Peter Zory
Professor Emeritus, University of Florida
E-mail confirmado em ece.ufl.edu
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Quantum well lasers
P Zory
Academic Press, 1993
812*1993
A model for GRIN-SCH-SQW diode lasers
SR Chinn, PS Zory, AR Reisinger
IEEE Journal of quantum Electronics 24 (11), 2191-2214, 1988
2791988
Nuclear Electric Field Gradient Determination Utilizing the Mossbauer Effect (Fe57)
P Zory
physical review 140, A1401-A1407, 1965
1521965
Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers
PS Zory, AR Reisinger, RG Waters, LJ Mawst, CA Zmudzinski, ...
Applied physics letters 49 (1), 16-18, 1986
921986
Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers
PS Zory, AR Reisinger, LJ Mawst, G Costrini, CA Zmudzinski, ...
Electronics letters 22 (9), 475-476, 1986
851986
Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers
A Reisinger, P Zory, R Waters
IEEE Journal of Quantum Electronics 23 (6), 993-999, 1987
821987
Laser oscillation in leaky corrugated optical waveguides
P Zory
Applied Physics Letters 22 (4), 125-128, 1973
811973
Grating-coupled double-heterostructure AlGaAs diode lasers
P Zory, L Comerford
IEEE Journal of Quantum Electronics 11 (7), 451-457, 1975
771975
Coherent, monolithic two‐dimensional (10× 10) laser arrays using grating surface emission
GA Evans, NW Carlson, JM Hammer, M Lurie, JK Butler, SL Palfrey, ...
Applied physics letters 53 (22), 2123-2125, 1988
751988
Dark-line-resistant, aluminum-free diode laser at 0.8 mu m
SL Yellen, AH Shepard, CM Harding, JA Baumann, RG Waters, ...
IEEE Photonics Technology Letters 4 (12), 1328-1330, 1992
691992
Intersubband quantum-box semiconductor lasers
CF Hsu, O Jeong-Seok, P Zory, D Botez
IEEE Journal of selected topics in Quantum Electronics 6 (3), 491-503, 2000
652000
Pulsed anodic oxides for III‐V semiconductor device fabrication
MJ Grove, DA Hudson, PS Zory, RJ Dalby, CM Harding, A Rosenberg
Journal of applied physics 76 (1), 587-589, 1994
641994
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation
LJ Mawst, A Bhattacharya, M Nesnidal, J Lopez, D Botez, JA Morris, ...
Applied physics letters 67 (20), 2901-2903, 1995
601995
Selectively etched diffraction gratings in GaAs
L Comerford, P Zory
Applied Physics Letters 25 (4), 208-210, 1974
561974
Coulomb enhancement in InGaAs-GaAs quantum-well lasers
CF Hsu, PS Zory, CH Wu, MA Emanuel
IEEE Journal of Selected Topics in Quantum Electronics 3 (2), 158-165, 1997
551997
High‐power seven‐element grating surface emitting diode laser array with 0.012° far‐field angle
NW Carlson, GA Evans, JM Hammer, M Lurie, LA Carr, FZ Hawrylo, ...
Applied physics letters 52 (12), 939-941, 1988
511988
Room temperature photopumped ZnSe lasers
CA Zmudzinski, Y Guan, PS Zory
IEEE Photonics Technology Letters 2 (2), 94-96, 1990
451990
Mounting arrangement for semiconductor optoelectronic devices
PS Zory, FW Scholl, HF Lockwood
US Patent 4,347,655, 1982
411982
Constricted double‐heterostructure (AlGa) As diode lasers
D Botez, P Zory
Applied Physics Letters 32 (4), 261-263, 1978
411978
Intersubband quantum box semiconductor laser
D Botez, PS Zory, CF Hsu
US Patent 5,953,356, 1999
401999
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