| p-type doping of MoS2 thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee II, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 092104, 2014 | 340 | 2014 |
| Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, PS Park, S Krishnamoorthy, DN Nath, ... Applied Physics Letters 102 (25), 252108, 2013 | 266 | 2013 |
| Atomic Layer Deposited MgO: A Lower Overpotential Coating for Li [Ni0. 5Mn0. 3Co0. 2] O2 Cathode. MR Laskar, DH Jackson, S Xu, RJ Hamers, D Morgan, TF Kuech ACS applied materials & interfaces, 2017 | 126 | 2017 |
| Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth P Gupta, AA Rahman, S Subramanian, S Gupta, A Thamizhavel, T Orlova, ... Scientific reports 6, 2016 | 105 | 2016 |
| Atomic Layer Deposition of Al2O3–Ga2O3 Alloy Coatings for Li [Ni0. 5Mn0. 3Co0. 2] O2 Cathode to Improve Rate Performance in Li-Ion Battery MR Laskar, DHK Jackson, Y Guan, S Xu, S Fang, M Dreibelbis, ... ACS applied materials & interfaces 8 (16), 10572-10580, 2016 | 65 | 2016 |
| Distorted wurtzite unit cells: Determination of lattice parameters of non-polar a-plane AlGaN and estimation of solid phase Al content MR Laskar, T Ganguli, AA Rahman, A Mukherjee, MR Gokhale, ... Journal of Applied Physics, 2011 | 63 | 2011 |
| Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes DHK Jackson, MR Laskar, S Fang, S Xu, RG Ellis, X Li, M Dreibelbis, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (3 …, 2016 | 41 | 2016 |
| High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers MR Laskar, T Ganguli, N Hatui, AA Rahman, MR Gokhale, A Bhattacharya Journal of Crystal Growth 315 (1), 208-210, 2011 | 23 | 2011 |
| MOVPE growth and characterization of a‐plane AlGaN over the entire composition range MR Laskar, T Ganguli, AA Rahman, AP Shah, MR Gokhale, ... physica status solidi (RRL)-Rapid Research Letters 4 (7), 163-165, 2010 | 22 | 2010 |
| Anisotropic structural and optical properties of a-plane (112¯ 0) AlInN nearly-lattice-matched to GaN MR Laskar, T Ganguli, AA Rahman, A Arora, N Hatui, MR Gokhale, ... Applied Physics Letters 98, 181108, 2011 | 20 | 2011 |
| Inductively coupled plasma–reactive ion etching of c-and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry AP Shah, MR Laskar, AA Rahman, MR Gokhale, A Bhattacharya Journal of Vacuum Science & Technology A 31 (6), 061305, 2013 | 16 | 2013 |
| Influence of buffer layers on the microstructure of MOVPE grown a-plane InN MR Laskar, T Ganguli, A Kadir, N Hatui, AA Rahman, AP Shah, ... Journal of Crystal Growth 315 (1), 233-237, 2011 | 13 | 2011 |
| Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires MR Laskar, SD Carnevale, ATMG Sarwar, PJ Phillips, MJ Mills, RC Myers Journal of electronic materials 42 (5), 863-867, 2013 | 12 | 2013 |
| Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy N Lobo, A Kadir, MR Laskar, AP Shah, MR Gokhale, AA Rahman, ... Journal of Crystal Growth 310 (23), 4747-4750, 2008 | 12 | 2008 |
| Molecular beam epitaxy of InN nanowires on Si ATMG Sarwar, SD Carnevale, TF Kent, MR Laskar, BJ May, RC Myers Journal of Crystal Growth 428, 59-70, 2015 | 10 | 2015 |
| Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire MR Laskar, A Kadir, AA Rahman, AP Shah, N Hatui, MR Gokhale, ... Journal of Crystal Growth 312 (14), 2033-2037, 2010 | 8 | 2010 |
| Low frequency noise in chemical vapor deposited MoS2 XL Yuji Wang, N Zhang, MR Laskar, L Ma, Y Wu, S Rajan, W Lu Microwave Measurement Conference, 2013 82nd ARFTG, 2013 | 6* | 2013 |
| Inductively coupled plasma reactive ion etching of III-nitride semiconductors AP Shah, MR Laskar, AA Rahman, MR Gokhale, A Bhattacharya Solid State Phys 1512, 494-495, 2013 | 4 | 2013 |
| Polarization sensitive solar-blind detector based on a-plane AlGaN MR Laskar, A Arora, AP Shah, AA Rahman, MR Gokhale, A Bhattacharya Photonics Conference (PHO), 2011 IEEE, 37-38, 2011 | 2 | 2011 |
| 1/f hopping noise in molybdenum disulphide Y Wang, X Luo, SA Poehler, MR Laskar, L Ma, Y Wu, S Rajan, W Lu Device Research Conference (DRC), 2014 72nd Annual, 59-60, 2014 | 1 | 2014 |
