| Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ... Applied Physics Letters 103 (14), 142109, 2013 | 79 | 2013 |
| Band alignment between GaN and ZrO2 formed by atomic layer deposition G Ye, H Wang, S Arulkumaran, GI Ng, Y Li, ZH Liu, KS Ang Applied Physics Letters 105 (2), 022106, 2014 | 34 | 2014 |
| Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta Ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon Y Li, GI Ng, S Arulkumaran, CMM Kumar, KS Ang, MJ Anand, H Wang, ... Applied Physics Express 6 (11), 116501, 2013 | 33 | 2013 |
| Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN Y Li, GI Ng, S Arulkumaran, G Ye, ZH Liu, K Ranjan, KS Ang Journal of Applied Physics 121 (4), 044504, 2017 | 24 | 2017 |
| AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate Y Li, GI Ng, S Arulkumaran, ZH Liu, K Ranjan, WC Xing, KS Ang, ... Physica Status Solidi (a) 214 (3), 1600555, 2017 | 15 | 2017 |
| AlGaN/GaN High Electron Mobility Transistors on Si with Sputtered TiN Gate Y Li, GI Ng, S Arulkumaran, CM Manoj Kumar, KS Ang, ZH Liu Compound Semiconductor Week (CSW), Toyama, Japan, 2016 | 15 | 2016 |
| Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition G Ye, H Wang, SL Geok Ng, R Ji, S Arulkumaran, GI Ng, Y Li, ZH Liu, ... Applied Physics Letters 105 (15), 152104, 2014 | 15 | 2014 |
| Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition G Ye, H Wang, SLG Ng, R Ji, S Arulkumaran, GI Ng, Y Li, ZH Liu, KS Ang Applied Physics Letters 106 (9), 091603, 2015 | 13 | 2015 |
| Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors Y Li, GI Ng, S Arulkumaran, G Ye, CMM Kumar, MJ Anand, ZH Liu Applied Physics Express 8 (4), 041001, 2015 | 12 | 2015 |
| Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping GK Dalapati, TKS Wong, Y Li, CK Chia, A Das, C Mahata, H Gao, ... Nanoscale research letters 7 (1), 99, 2012 | 12 | 2012 |
| Low Specific On-resistance and High Figure-of-Merit AlGaN/GaN HEMTs on Si Substrate with Non-gold Metal Stacks MJ Anand, GI Ng, S Arulkumaran, H Wang, Y Li, S Vicknesh, T Egawa 71st IEEE Device Research Conference (DRC), South Bend, Indiana, U. S. A, 2013 | 6 | 2013 |
| Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra‐heavy 131Xe+ implantation Y Li, GI Ng, S Arulkumaran, ZH Liu, K Ranjan, KS Ang, PP Murmu, ... physica status solidi (a) 214 (8), 2017 | 5 | 2017 |
| Improved Device Isolation in AlGaN/GaN HEMTs by Multi-energy 131Xe+ Implantation Y Li, GI Ng, S Arulkumaran, K Ranjan, ZH Liu, KS Ang, PP Murmu, ... International Workshop on Nitride Semiconductors (IWN 2016), Orlando …, 2016 | 2* | 2016 |
| Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN G Ye, H Wang, SLG Ng, R Ji, S Arulkumaran, GI Ng, Y Li, ZH Liu, KS Ang Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (5 …, 2015 | 1 | 2015 |
| AlGaN/GaN MISHEMTs on Silicon using Atomic Layer Deposited ZrO2 as Gate Dielectric G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ... 71st IEEE Device Research Conference (DRC), South Bend, Indiana, U. S. A, 2013 | 1 | 2013 |
| Sputtered TiN Schottky Barrier Diodes on AlGaN/GaN Heterostructures Y Li, GI Ng, S Arulkumaran, ZH Liu 9th International Conference on Materials for Advanced Technologies (ICMAT'17), 2017 | | 2017 |
| Inert-gas Heavy Ion Implantation for Device Isolation in AlGaN/GaN HEMTs on Si Substrate GI Ng, Y Li, S Arulkumaran, K Ranjan, J Kennedy 20th International Conference on Ion Beam Modification of Materials (IBMM …, 2016 | | 2016 |
| Investigation of CMOS-compatible Non-gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contact for AlGaN/GaN HEMT on Si with Low Contact Resistance Y Li, GI Ng, S Arulkumaran, CM Manoj Kumar, KS Ang, H Wang, G Ye, ... International Conference on Nitride Semiconducors (ICNS), Washington DC, U.S.A, 2013 | | 2013 |
| Interface characterization of epitaxial GaAs on Ge (001) substrates with high-k dielectrics for nanoscale CMOS TKS Wong, Y Li, G Dalapati, MK Kumar, CK Chia, BZH Gao, DZC Wang Nanoelectronics Conference (INEC), 2011 IEEE 4th International, 1-2, 2011 | | 2011 |
Subramaniam ArulkumaranTemasek Laboratories@NTU, Nanyang Technological UniversityE-mail confirmado em ntu.edu.sg
