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Yang Li
Yang Li
Ph.D, School of Electrical and Electronic Engineering, Nanyang Technological University
E-mail confirmado em e.ntu.edu.sg
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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 142109, 2013
792013
Band alignment between GaN and ZrO2 formed by atomic layer deposition
G Ye, H Wang, S Arulkumaran, GI Ng, Y Li, ZH Liu, KS Ang
Applied Physics Letters 105 (2), 022106, 2014
342014
Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta Ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
Y Li, GI Ng, S Arulkumaran, CMM Kumar, KS Ang, MJ Anand, H Wang, ...
Applied Physics Express 6 (11), 116501, 2013
332013
Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
Y Li, GI Ng, S Arulkumaran, G Ye, ZH Liu, K Ranjan, KS Ang
Journal of Applied Physics 121 (4), 044504, 2017
242017
AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate
Y Li, GI Ng, S Arulkumaran, ZH Liu, K Ranjan, WC Xing, KS Ang, ...
Physica Status Solidi (a) 214 (3), 1600555, 2017
152017
AlGaN/GaN High Electron Mobility Transistors on Si with Sputtered TiN Gate
Y Li, GI Ng, S Arulkumaran, CM Manoj Kumar, KS Ang, ZH Liu
Compound Semiconductor Week (CSW), Toyama, Japan, 2016
152016
Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition
G Ye, H Wang, SL Geok Ng, R Ji, S Arulkumaran, GI Ng, Y Li, ZH Liu, ...
Applied Physics Letters 105 (15), 152104, 2014
152014
Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition
G Ye, H Wang, SLG Ng, R Ji, S Arulkumaran, GI Ng, Y Li, ZH Liu, KS Ang
Applied Physics Letters 106 (9), 091603, 2015
132015
Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors
Y Li, GI Ng, S Arulkumaran, G Ye, CMM Kumar, MJ Anand, ZH Liu
Applied Physics Express 8 (4), 041001, 2015
122015
Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
GK Dalapati, TKS Wong, Y Li, CK Chia, A Das, C Mahata, H Gao, ...
Nanoscale research letters 7 (1), 99, 2012
122012
Low Specific On-resistance and High Figure-of-Merit AlGaN/GaN HEMTs on Si Substrate with Non-gold Metal Stacks
MJ Anand, GI Ng, S Arulkumaran, H Wang, Y Li, S Vicknesh, T Egawa
71st IEEE Device Research Conference (DRC), South Bend, Indiana, U. S. A, 2013
62013
Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra‐heavy 131Xe+ implantation
Y Li, GI Ng, S Arulkumaran, ZH Liu, K Ranjan, KS Ang, PP Murmu, ...
physica status solidi (a) 214 (8), 2017
52017
Improved Device Isolation in AlGaN/GaN HEMTs by Multi-energy 131Xe+ Implantation
Y Li, GI Ng, S Arulkumaran, K Ranjan, ZH Liu, KS Ang, PP Murmu, ...
International Workshop on Nitride Semiconductors (IWN 2016), Orlando …, 2016
2*2016
Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN
G Ye, H Wang, SLG Ng, R Ji, S Arulkumaran, GI Ng, Y Li, ZH Liu, KS Ang
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (5 …, 2015
12015
AlGaN/GaN MISHEMTs on Silicon using Atomic Layer Deposited ZrO2 as Gate Dielectric
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
71st IEEE Device Research Conference (DRC), South Bend, Indiana, U. S. A, 2013
12013
Sputtered TiN Schottky Barrier Diodes on AlGaN/GaN Heterostructures
Y Li, GI Ng, S Arulkumaran, ZH Liu
9th International Conference on Materials for Advanced Technologies (ICMAT'17), 2017
2017
Inert-gas Heavy Ion Implantation for Device Isolation in AlGaN/GaN HEMTs on Si Substrate
GI Ng, Y Li, S Arulkumaran, K Ranjan, J Kennedy
20th International Conference on Ion Beam Modification of Materials (IBMM …, 2016
2016
Investigation of CMOS-compatible Non-gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contact for AlGaN/GaN HEMT on Si with Low Contact Resistance
Y Li, GI Ng, S Arulkumaran, CM Manoj Kumar, KS Ang, H Wang, G Ye, ...
International Conference on Nitride Semiconducors (ICNS), Washington DC, U.S.A, 2013
2013
Interface characterization of epitaxial GaAs on Ge (001) substrates with high-k dielectrics for nanoscale CMOS
TKS Wong, Y Li, G Dalapati, MK Kumar, CK Chia, BZH Gao, DZC Wang
Nanoelectronics Conference (INEC), 2011 IEEE 4th International, 1-2, 2011
2011
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