Jiahao Kang
Jiahao Kang
Frontier Research Center, Royole Corporation
E-mail confirmado em royole.com - Página inicial
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Electrical contacts to two-dimensional semiconductors
A Allain, J Kang, K Banerjee, A Kis
Nature materials 14 (12), 1195-1205, 2015
9462015
Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors
W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee
Nano letters 13 (5), 1983-1990, 2013
7982013
A subthermionic tunnel field-effect transistor with an atomically thin channel
D Sarkar, X Xie, W Liu, W Cao, J Kang, Y Gong, S Kraemer, PM Ajayan, ...
Nature 526 (7571), 91-95, 2015
6422015
Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors
J Kang, W Liu, D Sarkar, D Jena, K Banerjee
Physical Review X 4 (3), 031005, 2014
5872014
High-performance MoS2 transistors with low-resistance molybdenum contacts
J Kang, W Liu, K Banerjee
Applied Physics Letters 104 (9), 093106, 2014
3312014
Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing
D Sarkar, X Xie, J Kang, H Zhang, W Liu, J Navarrete, M Moskovits, ...
Nano letters 15 (5), 2852-2862, 2015
2442015
2D semiconductor FETs—Projections and design for sub-10 nm VLSI
W Cao, J Kang, D Sarkar, W Liu, K Banerjee
IEEE transactions on electron devices 62 (11), 3459-3469, 2015
1752015
Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry
S Lei, X Wang, B Li, J Kang, Y He, A George, L Ge, Y Gong, P Dong, Z Jin, ...
Nature nanotechnology 11 (5), 465, 2016
1362016
Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors
W Liu, D Sarkar, J Kang, W Cao, K Banerjee
Acs Nano 9 (8), 7904-7912, 2015
1172015
A compact current–voltage model for 2D semiconductor based field-effect transistors considering interface traps, mobility degradation, and inefficient doping effect
W Cao, J Kang, W Liu, K Banerjee
IEEE Transactions on Electron Devices 61 (12), 4282-4290, 2014
1062014
High-Performance Few-Layer-MoS2 Field-Effect-Transistor with Record Low Contact-Resistance
W Liu, J Kang, W Cao, D Sarkar, Y Khatami, D Jane, K Banerjee
IEEE International Electron Devices Meeting (IEDM), 19.4.1 - 19.4.4, 2013
1042013
Low-Frequency Noise in Bilayer MoS2 Transistor
X Xie, D Sarkar, W Liu, J Kang, O Marinov, MJ Deen, K Banerjee
ACS nano 8 (6), 5633-5640, 2014
812014
Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects
J Jiang, J Kang, W Cao, X Xie, H Zhang, JH Chu, W Liu, K Banerjee
Nano letters 17 (3), 1482-1488, 2017
772017
Proposal for all-graphene monolithic logic circuits
J Kang, D Sarkar, Y Khatami, K Banerjee
Applied Physics Letters 103 (8), 083113, 2013
642013
Graphene and beyond-graphene 2D crystals for next-generation green electronics
J Kang, W Cao, X Xie, D Sarkar, W Liu, K Banerjee
Micro-and Nanotechnology Sensors, Systems, and Applications VI 9083, 908305, 2014
632014
A computational study of metal-contacts to beyond-graphene 2D semiconductor materials
J Kang, D Sarkar, W Liu, D Jena, K Banerjee
2012 International Electron Devices Meeting, 17.4. 1-17.4. 4, 2012
602012
Subthreshold-swing physics of tunnel field-effect transistors
W Cao, D Sarkar, Y Khatami, J Kang, K Banerjee
AIP Advances 4 (6), 067141, 2014
432014
2-D layered materials for next-generation electronics: Opportunities and challenges
W Cao, J Jiang, X Xie, A Pal, JH Chu, J Kang, K Banerjee
IEEE Transactions on Electron Devices 65 (10), 4109-4121, 2018
402018
On-chip intercalated-graphene inductors for next-generation radio frequency electronics
J Kang, Y Matsumoto, X Li, J Jiang, X Xie, K Kawamoto, M Kenmoku, ...
Nature Electronics 1 (1), 46-51, 2018
392018
Can 2D-nanocrystals extend the lifetime of floating-gate transistor based nonvolatile memory?
W Cao, J Kang, S Bertolazzi, A Kis, K Banerjee
IEEE Transactions on Electron Devices 61 (10), 3456-3464, 2014
382014
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