| Investigations on cobalt doped GaN for spintronic applications SM Basha, S Ramasubramanian, M Rajagopalan, J Kumar, TW Kang, ... Journal of crystal growth 318 (1), 432-435, 2011 | 19 | 2011 |
| Magnetic properties of Ni doped gallium nitride with vacancy induced defect SM Basha, S Ramasubramanian, R Thangavel, M Rajagopalan, J Kumar Journal of magnetism and magnetic materials 322 (2), 238-241, 2010 | 17 | 2010 |
| Effect of 100 MeV Ni9+ ion irradiation on MOCVD grown n-GaN VS Kumar, J Kumar, P Puviarasu, SM Basha, D Kanjilal, K Asokan Physica B: Condensed Matter 406 (22), 4210-4213, 2011 | 15 | 2011 |
| Micro Raman analysis of MOCVD grown gallium nitride epilayers irradiated with light and heavy ions SM Basha, K Asokan, P Sangeetha, V Ramakrishnan, J Kumar Materials Chemistry and Physics 132 (2-3), 494-499, 2012 | 12 | 2012 |
| Magnetic properties of gadolinium and carbon co-doped gallium nitride NS Kaleemullah, S Ramsubramanian, R Mohankumar, SM Basha, ... Solid State Communications 249, 7-11, 2017 | 10 | 2017 |
| Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si (111) L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, ... Journal of Applied Physics 114 (12), 2013 | 9 | 2013 |
| Investigations of cobalt and carbon codoping in gallium nitride for spintronic applications SM Basha, S Ramasubramanian, M Rajagopalan, J Kumar Journal of magnetism and magnetic materials 324 (8), 1528-1533, 2012 | 9 | 2012 |
| Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si (111) L Ravikiran, K Radhakrishnan, S Munawar Basha, N Dharmarasu, ... Journal of Applied Physics 117 (24), 2015 | 6 | 2015 |
| Effect of growth temperature on gallium nitride nanostructures using HVPE technique SM Basha, SR Ryu, TW Kang, ON Srivastava, V Ramakrishnan, J Kumar Physica E: Low-dimensional Systems and Nanostructures 44 (9), 1885-1888, 2012 | 6 | 2012 |
| Micro Raman analysis on the impact of light ion irradiation of hydride vapor-phase epitaxy grown gallium nitride epilayers P Atheek, P Puviarasu, SM Basha, K Bhujel Thin Solid Films 761, 139526, 2022 | 4 | 2022 |
| Structural and magnetic properties of Fe-doped GaN by sol-gel technique P Muzammil, SM Basha, GS Muhammed Journal of Superconductivity and Novel Magnetism 33 (9), 2767-2771, 2020 | 4 | 2020 |
| Synthesis of GaN fibers by varying precursor concentrations using Electrospinning method P Muzammil, SM Basha, R Loganathan, G Shakil Optik 184, 75-81, 2019 | 2 | 2019 |
| Impact of swift heavy ion irradiation on as-grown gallium nitride epilayers by MOCVD technique P Atheek, P Puviarasu, SM Basha Radiation Physics and Chemistry 216, 111430, 2024 | 1 | 2024 |
| Micro-Raman analysis of HVPE grown etched GaN epilayer with porous formation A Posha, P Padmanabhan Semiconductor Science and Technology 38 (7), 075006, 2023 | | 2023 |
| Effect of precursors condition on the structural morphology of synthesized GaN P Muzammil, SM Basha, GS Muhammad AIP Conference Proceedings 1953 (1), 2018 | | 2018 |
