Volodymyr Sheremet
Volodymyr Sheremet
E-mail confirmado em bilkent.edu.tr
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Mechanism of contact resistance formation in ohmic contacts with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ...
Journal of applied physics 111 (8), 083701, 2012
462012
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
322008
Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts
AE Belyaev, NS Boltovets, RV Konakova, Y Kudryk, AV Sachenko, ...
arXiv preprint arXiv:1104.1030, 2011
212011
Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, VP Kladko, ...
Journal of applied physics 112 (6), 063703, 2012
132012
Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density
AV Sachenko, AE Belyaev, AV Bobyl, NS Boltovets, VN Ivanov, ...
Semiconductors 46 (3), 334-341, 2012
132012
Development of high-stable contact systems to gallium nitride microwave diodes
AE Belyaev, NS Boltovets, VN Ivanov, LM Kapitanchuk, VP Kladko, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2007
132007
Temperature dependence of contact resistance for Au-Ti-Pd 2 Si-n+-Si ohmic contacts subjected to microwave irradiation
AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, AV Sachenko, ...
Semiconductors 46 (3), 330-333, 2012
102012
Metrological aspects of measuring resistance of ohmic contacts
VN Sheremet
Radioelectronics and communications systems 53 (3), 119-128, 2010
92010
Temperature dependences of the contact resistivity in ohmic contacts to n+-InN
AV Sachenko, AE Belyaev, NS Boltovets, PN Brunkov, VN Jmerik, ...
Semiconductors 49 (4), 461-471, 2015
82015
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ...
physica status solidi c 10 (3), 498-500, 2013
82013
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ...
Superlattices and Microstructures 111, 1177-1194, 2017
72017
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ...
physica status solidi c 10 (3), 498-500, 2013
72013
The mechanism of contact-resistance formation on lapped n-Si surfaces
AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, ...
Semiconductors 47 (3), 449-454, 2013
72013
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
AA M. Genç, V. Sheremet, M. Elçi, A.E. Kasapoğlu, İ. Altuntaş, İ. Demir, G ...
Superlattices and Microstructures 128, 9-13, 2019
62019
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 113, 623-634, 2018
62018
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
AE Belyaev, NS Boltovets, VN Ivanov, VP Kladko, RV Konakova, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2008
62008
The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, SA Vitusevich, ...
Technical Physics Letters 42 (6), 649-651, 2016
42016
Effect of microwave treatment on current flow mechanisms in Au-TiB x-Al-Ti-n+-nn+-GaN-Al 2 O 3 ohmic contacts
AE Belyaev, NS Boltovets, SA Vitusevich, VN Ivanov, RV Konakova, ...
Semiconductors 44 (6), 745-751, 2010
42010
Mechanism of current flow in a Au-Ti-Al-Ti-n+-GaN ohmic contact in the temperature range of 4.2–300 K
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, LM Kapitanchuk, ...
Semiconductors 48 (10), 1308-1311, 2014
32014
Effect of microwave treatment on current flow mechanism ohmic contacts to GaN
VN Sheremet
Semiconductor physics quantum electronics & optoelectronics, 280-284, 2013
32013
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