| Molecular beam epitaxy: from research to mass production M Henini Newnes, 2012 | 264 | 2012 |
| Disorder and the Urbach edge in dilute bismide GaAsBi C Gogineni, NA Riordan, SR Johnson, X Lu, T Tiedje Applied Physics Letters 103 (4), 041110, 2013 | 56 | 2013 |
| Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices PT Webster, AJ Shalindar, NA Riordan, C Gogineni, H Liang, AR Sharma, ... Journal of Applied Physics 119 (22), 225701, 2016 | 52 | 2016 |
| Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs NA Riordan, C Gogineni, SR Johnson, X Lu, T Tiedje, D Ding, YH Zhang, ... Journal of Materials Science: Materials in Electronics 23 (10), 1799-1804, 2012 | 38 | 2012 |
| Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices PT Webster, NA Riordan, C Gogineni, S Liu, J Lu, XH Zhao, DJ Smith, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014 | 36 | 2014 |
| Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties Z Batool, S Chatterjee, A Chernikov, A Duzik, R Fritz, C Gogineni, K Hild, ... Molecular Beam Epitaxy, 2013 | 10 | 2013 |
| OPTICAL DEVICE BASED ON BISMUTH-CONTAINING III-V COMPOUND MULTILAYER SEMICONDUCTORS PT Webster, AR Sharma, C Gogineni, SR Johnson, NA Riordan US Patent 20,150,155,420, 2015 | 3 | 2015 |
| Design and performance of mid and long infrared III-V semiconductor superlattice materials PT Webster, AJ Shalindar, NA Riordan, C Gogineni, H Liang, AR Sharma, ... Bulletin of the American Physical Society 60, 2015 | | 2015 |
