30-nm InAs PHEMTs With and DH Kim, JA del Alamo
Electron Device Letters, IEEE 31 (8), 806-808, 2010
229 * 2010 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz DH Kim, JA Del Alamo
IEEE Electron Device Letters 29 (8), 830-833, 2008
216 2008 fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7 Ga0.3 As MHEMTs with gm_max > 2.7 mS/µm DH Kim, B Brar, JA del Alamo
2011 International Electron Devices Meeting, 13.6. 1-13.6. 4, 2011
147 2011 Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors HS Kang, CS Choi, WY Choi, DH Kim, KS Seo
Applied physics letters 84 (19), 3780-3782, 2004
121 2004 IEEE Photonics Technol. Lett HK Choi, HS Kang, WY Choi, HJ Kim, WJ Choi, DH Kim, KC Jang, KS Seo
IEEE Photonics Technol. Lett 15, 1330-1332, 2003
112 2003 Lateral and Vertical Scaling of HEMTs for Post-Si-CMOS Logic Applications DH Kim, JA Del Alamo
IEEE transactions on electron devices 55 (10), 2546-2553, 2008
110 2008 Logic Suitability of 50-nm HEMTs for Beyond-CMOS Applications DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE transactions on electron devices 54 (10), 2606-2613, 2007
92 2007 L {sub g}= 100 nm In {sub 0.7} Ga {sub 0.3} As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer HM Kwon, D Veksler, D Gilmer, PD Kirsch, DH Kim, TW Hudnall, ...
Applied Physics Letters 104 (16), 2014
87 2014 A self-aligned InGaAs HEMT architecture for logic applications N Waldron, DH Kim, JA Del Alamo
IEEE Transactions on Electron Devices 57 (1), 297-304, 2009
87 2009 30 nm E-mode InAs PHEMTs for THz and future logic applications DH Kim, JA del Alamo
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
86 2008 Scalability of sub-100 nm InAs HEMTs on InP substrate for future logic applications DH Kim, JA Del Alamo
IEEE transactions on electron devices 57 (7), 1504-1511, 2010
83 2010 Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
83 * 2005 Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs DH Kim, JA Del Alamo, DA Antoniadis, B Brar
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
77 2009 Logic performance of 40 nm InAs HEMTs DH Kim, JA Del Alamo
2007 IEEE International Electron Devices Meeting, 629-632, 2007
75 2007 50-nm E-mode In0.7 Ga0.3 As PHEMTs on 100-mm InP substrate with fmax > 1 THz DH Kim, JA del Alamo, P Chen, W Ha, M Urteaga, B Brar
2010 International Electron Devices Meeting, 30.6. 1-30.6. 4, 2010
71 2010 InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ...
2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013
61 2013 Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems CS Choi, HS Kang, WY Choi, DH Kim, KS Seo
IEEE transactions on microwave theory and techniques 53 (1), 256-263, 2005
59 2005 Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition MM Rahman, JG Kim, DH Kim, TW Kim
Micromachines 10 (6), 361, 2019
56 2019 Ultra-wideband (from DC to 110 GHz) CPW to CPS transition S Kim, S Jeong, YT Lee, DH Kim, JS Lim, KS Seo, S Nam
Electronics Letters 38 (13), 622-623, 2002
55 2002 Quantum capacitance in scaled down III–V FETs D Jin, D Kim, T Kim, JA del Alamo
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
54 2009