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Victor Chan
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High performance CMOS fabricated on hybrid substrate with different crystal orientations
M Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ...
IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 2003
4232003
Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
V Chan, KW Guarini, M Ieong
US Patent 6,821,826, 2004
3042004
Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
V Chan, K Guarini, M Ieong
US Patent App. 10/914,433, 2005
2922005
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
HS Yang, R Malik, S Narasimha, Y Li, R Divakaruni, P Agnello, S Allen, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
2342004
Hybrid-orientation technology (HOT): Opportunities and challenges
M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ...
IEEE Transactions on Electron Devices 53 (5), 965-978, 2006
2212006
High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering
V Chan, R Rengarajan, N Rovedo, W Jin, T Hook, P Nguyen, J Chen, ...
IEEE International Electron Devices Meeting 2003, 3.8. 1-3.8. 4, 2003
177*2003
Increasing carrier mobility in NFET and PFET transistors on a common wafer
V Chan, H Yang
US Patent 6,939,814, 2005
1182005
Three dimensional CMOS devices and integrated circuits
M Ieong, KW Guarini, V Chan, K Bernstein, R Joshi, J Kedzierski, ...
Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003 …, 2003
1062003
High performance and low power transistors integrated in 65nm bulk CMOS technology
Z Luo, A Steegen, M Eller, R Mann, C Baiocco, P Nguyen, L Kim, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
1052004
HERMES Core–A 14nm CMOS and PCM-based In-Memory Compute Core using an array of 300ps/LSB Linearized CCO-based ADCs and local digital processing
R Khaddam-Aljameh, M Stanisavljevic, JF Mas, G Karunaratne, ...
2021 Symposium on VLSI Circuits, 1-2, 2021
952021
Material for contact etch layer to enhance device performance
AB Chakravarti, S Narasimha, V Chan, J Holt, SN Chakravarti
US Patent 7,001,844, 2006
782006
Strain for CMOS performance improvement
V Chan, K Rim, M Ieong, S Yang, R Malik, YW Teh, M Yang
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005 …, 2005
782005
Transistor scaling with novel materials
M Ieong, V Narayanan, D Singh, A Topol, V Chan, Z Ren
Materials today 9 (6), 26-31, 2006
722006
HERMES-Core—A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs
R Khaddam-Aljameh, M Stanisavljevic, JF Mas, G Karunaratne, M Brändli, ...
IEEE Journal of Solid-State Circuits 57 (4), 1027-1038, 2022
692022
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
652016
Integrated liquid crystal optical switch based on total internal reflection
A Zhang, KT Chan, MS Demokan, VWC Chan, PCH Chan, HS Kwok, ...
Applied Physics Letters 86 (21), 2005
632005
Three dimensional CMOS integrated circuits on large grain polysilicon films
VWC Chan, PCH Chan, M Chan
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
632000
Fully on-chip MAC at 14 nm enabled by accurate row-wise programming of PCM-based weights and parallel vector-transport in duration-format
P Narayanan, S Ambrogio, A Okazaki, K Hosokawa, H Tsai, A Nomura, ...
IEEE Transactions on Electron Devices 68 (12), 6629-6636, 2021
612021
Gate-induced-drain-leakage current in 45-nm CMOS technology
X Yuan, JE Park, J Wang, E Zhao, DC Ahlgren, T Hook, J Yuan, ...
IEEE Transactions on Device and Materials Reliability 8 (3), 501-508, 2008
602008
On the integration of CMOS with hybrid crystal orientations
M Yang, V Chan, SH Ku, M Ieong, L Shi, KK Chan, CS Murthy, RT Mo, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 160-161, 2004
592004
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