Michael Kneissl
Michael Kneissl
Professor, Institute of Solid State Physics, TU Berlin, Germany
E-mail confirmado em physik.tu-berlin.de - Página inicial
Citado por
Citado por
Advances in group III-nitride-based deep UV light-emitting diode technology
M Kneissl, T Kolbe, C Chua, V Kueller, N Lobo, J Stellmach, A Knauer, ...
Semiconductor Science and Technology 26 (1), 014036, 2010
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied physics letters 75 (10), 1360-1362, 1999
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
M Kneissl, TY Seong, J Han, H Amano
nature photonics 13 (4), 233-244, 2019
Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection
MA Würtele, T Kolbe, M Lipsz, A Külberg, M Weyers, M Kneissl, M Jekel
Water research 45 (3), 1481-1489, 2011
Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars
GD Chern, HE Tureci, AD Stone, RK Chang, M Kneissl, NM Johnson
Applied Physics Letters 83 (9), 1710-1712, 2003
III-Nitride ultraviolet emitters
M Kneissl, J Rass
Springer Series in Materials Science, 2016
Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates
TJ Cervantes, LT Romano, MA Kneissl
US Patent 6,379,985, 2002
light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied Physics Letters 77 (18), 2822-2824, 2000
Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
MA Kneissl
US Patent 7,751,455, 2010
Metastability of oxygen donors in AlGaN
MD McCluskey, NM Johnson, CG Van de Walle, DP Bour, M Kneissl, ...
Physical Review Letters 80 (18), 4008, 1998
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
WS Wong, MA Kneissl
US Patent 6,562,648, 2003
Method of fabricating GAN semiconductor structures using laser-assisted epitaxial liftoff
CL Chua, MA Kneissl, DP Bour
US Patent 6,455,340, 2002
Method for nitride based laser diode with growth substrate removed using an intermediate substrate
MA Kneissl, DP Bour, P Mei, LT Romano
US Patent 6,365,429, 2002
Ultraviolet semiconductor laser diodes on bulk AlN
M Kneissl, Z Yang, M Teepe, C Knollenberg, O Schmidt, P Kiesel, ...
Journal of Applied Physics 101 (12), 123103, 2007
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ...
Applied Physics Letters 100 (2), 021101, 2012
Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission
M Kneissl, M Teepe, N Miyashita, NM Johnson, GD Chern, RK Chang
Applied Physics Letters 84 (14), 2485-2487, 2004
Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes
T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ...
Applied Physics Letters 97 (17), 171105, 2010
Nitride-based VCSEL or light emitting diode with pn tunnel junction current injection
MA Kneissl, P Kiesel, CG Van de Walle
US Patent 6,515,308, 2003
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
T Wernicke, L Schade, C Netzel, J Rass, V Hoffmann, S Ploch, A Knauer, ...
Semiconductor science and technology 27 (2), 024014, 2012
Nitride emitters go nonpolar
UT Schwarz, M Kneissl
physica status solidi (RRL)–Rapid Research Letters 1 (3), A44-A46, 2007
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