High responsivity and quantum efficiency of graphene/silicon photodiodes achieved by interdigitating Schottky and gated regions S Riazimehr, S Kataria, JM Gonzalez-Medina, S Wagner, M Shaygan, ... Acs Photonics 6 (1), 107-115, 2018 | 89 | 2018 |
GFET asymmetric transfer response analysis through access region resistances A Toral-Lopez, EG Marin, F Pasadas, JM Gonzalez-Medina, FG Ruiz, ... Nanomaterials 9 (7), 1027, 2019 | 15 | 2019 |
Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors JM Gonzalez-Medina, FG Ruiz, EG Marin, A Godoy, F Gámiz Solid-State Electronics 114, 30-34, 2015 | 15 | 2015 |
Analytic potential and charge model of semiconductor quantum wells EG Marin, IM Tienda-Luna, FG Ruiz, JM Gonzalez-Medina, A Godoy, ... IEEE Transactions on Electron Devices 62 (12), 4186-4191, 2015 | 11 | 2015 |
Assessment of three electrolyte–molecule electrostatic interaction models for 2D material based BioFETs A Toral-Lopez, EG Marin, JM Gonzalez-Medina, FJ Romero, FG Ruiz, ... Nanoscale Advances 1 (3), 1077-1085, 2019 | 8 | 2019 |
Quasi-fermi-based charge transport scheme for device simulation in cryogenic, wide bandgap, and high-voltage applications Z Stanojević, JM González-Medina, F Schanovsky, M Karner IEEE Transactions on Electron Devices 70 (2), 708-713, 2022 | 7 | 2022 |
Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires C Martinez-Blanque, EG Marin, A Toral, JM Gonzalez-Medina, FG Ruiz, ... Journal of Physics D: Applied Physics 50 (49), 495106, 2017 | 7 | 2017 |
On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs JM Gonzalez-Medina, Z Stanojević, Z Hou, Q Zhang, W Li, J Xu, M Karner Solid-State Electronics 199, 108494, 2023 | 6 | 2023 |
Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors A Toral-Lopez, F Pasadas, EG Marin, A Medina-Rull, ... Nanoscale Advances, 2021 | 5 | 2021 |
Design, characterization and simulation of electronic and optoelectronic nanodevices based on bidimensional materials JM González-Medina Universidad de Granada, 2020 | 1 | 2020 |
Numerical Investigation of the Photogating Effect in MoTe2 Photodetectors JM Gonzalez-Medina, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 1 | 2019 |
Simulation of 2D semiconductor based MOSFETs A Toral-Lopez, JM Gonzalez-Medina, E Gonzalez Marin, ... | 1 | 2018 |
STEM Image Based Structure Generation for Advanced CMOS Devices F Widauer, X Klemenschits, C Balla, G Rzepa, JM Gonzalez-Medina, ... 2024 International Conference on Simulation of Semiconductor Processes and …, 2024 | | 2024 |
A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence M Thesberg, F Schanovsky, Y Zhao, M Karner, JM Gonzalez-Medina, ... Micromachines 15 (7), 829, 2024 | | 2024 |
Hole mobility of cylindrical GaSb nanowires FJ García Ruiz, E González Marín, CJ Martínez Blanque, IM Tienda Luna, ... | | 2018 |
Gate capacitance performance of p-type InSb and GaSb nanowires CJ Martínez Blanque, FJ García Ruiz, L Donetti, A Toral López, ... | | 2017 |
Numerical study of p-type InSb and GaSb nanowires CJ Martínez Blanque, A Toral López, JM González-Medina, ... | | 2017 |
On the influence of the back-gate bias on InGaAs Trigate MOSFETs EG Marin, FG Ruiz, A Godoy, JM Gonzalez-Medina, IM Tienda-Luna, ... 2016 Joint International EUROSOI Workshop and International Conference on …, 2016 | | 2016 |
Simulation of the phonon-limited electron mobility in multi-layer MoS 2 field-effect transistors JM González-Medina, FJ Garcia Ruiz, A Godoy Medina, ... IEEE, 2015 | | 2015 |
Calculation of the Ballistic Current of Few-Layer MoS2 Field-Effect Transistors FJ García Ruiz, B Biel, JM González-Medina, A Toral-Lopez, ... | | 2015 |