Jean-Michel Chauveau
Jean-Michel Chauveau
GEMAC Université Versailles Saint Quentin, Paris Saclay
E-mail confirmado em uvsq.fr - Página inicial
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Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn, Mg) O quantum wells
L Béaur, T Bretagnon, B Gil, A Kavokin, T Guillet, C Brimont, D Tainoff, ...
Physical Review B 84 (16), 165312, 2011
802011
Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on -plane ZnO substrates
JM Chauveau, M Teisseire, H Kim-Chauveau, C Deparis, C Morhain, ...
Applied Physics Letters 97 (8), 081903, 2010
792010
Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
A Hierro, JM Ulloa, JM Chauveau, A Trampert, MA Pinault, E Tournié, ...
Journal of applied physics 94 (4), 2319-2324, 2003
792003
Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy
JM Chauveau, M Laügt, P Vennegues, M Teisseire, B Lo, C Deparis, ...
Semiconductor science and technology 23 (3), 035005, 2008
742008
Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy
JM Chauveau, Y Androussi, A Lefebvre, J Di Persio, Y Cordier
Journal of applied physics 93 (7), 4219-4225, 2003
722003
Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
JM Chauveau, A Trampert, KH Ploog, E Tournié
Applied physics letters 84 (14), 2503-2505, 2004
702004
Interface structure and anisotropic strain relaxation of nonpolar wurtzite and orientations: ZnO epilayers grown on sapphire
JM Chauveau, P Vennéguès, M Laügt, C Deparis, J Zuniga-Perez, ...
Journal of Applied Physics 104 (7), 073535, 2008
692008
Interfacial structure and defect analysis of nonpolar ZnO films grown on -plane sapphire by molecular beam epitaxy
P Vennéguès, JM Chauveau, M Korytov, C Deparis, J Zuniga-Perez, ...
Journal of Applied Physics 103 (8), 083525, 2008
582008
Residual and nitrogen doping of homoepitaxial nonpolar -plane ZnO films grown by molecular beam epitaxy
D Taïnoff, M Al-Khalfioui, C Deparis, B Vinter, M Teisseire, C Morhain, ...
Applied Physics Letters 98 (13), 131915, 2011
532011
GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
E Tournié, MA Pinault, M Laügt, JM Chauveau, A Trampert, KH Ploog
Applied physics letters 82 (12), 1845-1847, 2003
492003
Growth of non-polar ZnO/(Zn, Mg) O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy
JM Chauveau, DA Buell, M Laügt, P Vennegues, M Teisseire-Doninelli, ...
Journal of crystal growth 301, 366-369, 2007
482007
Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
G Tabares, A Hierro, B Vinter, JM Chauveau
Applied Physics Letters 99 (7), 071108, 2011
462011
Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
JM Chauveau, A Trampert, KH Ploog, MA Pinault, E Tournié
Applied physics letters 82 (20), 3451-3453, 2003
462003
Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga, In)(N, As) diluted nitride heterostructures on GaAs substrates
A Trampert, JM Chauveau, KH Ploog, E Tournié, A Guzmán
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
422004
Optical determination of the effective wetting layer thickness and composition in In As∕ Ga (In) As quantum dots
M Hugues, M Teisseire, JM Chauveau, B Vinter, B Damilano, JY Duboz, ...
Physical Review B 76 (7), 075335, 2007
382007
Low temperature reflectivity study of nonpolar ZnO/(Zn, Mg) O quantum wells grown on M-plane ZnO substrates
L Beaur, T Bretagnon, C Brimont, T Guillet, B Gil, D Tainoff, M Teisseire, ...
Applied Physics Letters 98 (10), 101913, 2011
372011
Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
JM Chauveau, A Trampert, MA Pinault, E Tournie, K Du, KH Ploog
Journal of crystal growth 251 (1-4), 383-387, 2003
362003
Blue-shift mechanisms in annealed (Ga, In)(N, As)∕ Ga As quantum wells
M Hugues, B Damilano, JM Chauveau, JY Duboz, J Massies
Physical Review B 75 (4), 045313, 2007
352007
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
A Redondo-Cubero, A Hierro, JM Chauveau, K Lorenz, G Tabares, ...
CrystEngComm 14 (5), 1637-1640, 2012
342012
Growth of GaN based structures on Si (1 1 0) by molecular beam epitaxy
Y Cordier, JC Moreno, N Baron, E Frayssinet, JM Chauveau, M Nemoz, ...
Journal of crystal growth 312 (19), 2683-2688, 2010
342010
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