Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K K Parto, SI Azzam, K Banerjee, G Moody
Nature communications 12 (1), 3585, 2021
135 2021 Ultimate monolithic-3D integration with 2D materials: rationale, prospects, and challenges J Jiang, K Parto, W Cao, K Banerjee
IEEE Journal of the Electron Devices Society 7, 878-887, 2019
95 2019 Prospects and challenges of quantum emitters in 2D materials SI Azzam, K Parto, G Moody
Applied Physics Letters 118 (24), 2021
67 2021 One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across Mo S 2/Metal … K Parto, A Pal, T Chavan, K Agashiwala, CH Yeh, W Cao, K Banerjee
Physical Review Applied 15 (6), 064068, 2021
35 2021 Cavity-enhanced 2D material quantum emitters deterministically integrated with silicon nitride microresonators K Parto, SI Azzam, N Lewis, SD Patel, S Umezawa, K Watanabe, ...
Nano Letters 22 (23), 9748-9756, 2022
29 2022 Area-selective-CVD technology enabled top-gated and scalable 2D-heterojunction transistors with dynamically tunable Schottky barrier CH Yeh, W Cao, A Pal, K Parto, K Banerjee
2019 IEEE International Electron Devices Meeting (IEDM), 23.4. 1-23.4. 4, 2019
22 2019 Monolithic-3D integration with 2D materials: Toward ultimate vertically-scaled 3D-ICs J Jiang, K Parto, W Cao, K Banerjee
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018
14 2018 Demonstration of CMOS-compatible multi-level graphene interconnects with metal vias K Agashiwala, J Jiang, K Parto, D Zhang, CH Yeh, K Banerjee
IEEE Transactions on Electron Devices 68 (4), 2083-2091, 2021
13 2021 A mode-balanced reconfigurable logic gate built in a van der Waals strata W Cao, JH Chu, K Parto, K Banerjee
npj 2D Materials and Applications 5 (1), 20, 2021
13 2021 Impact of transport anisotropy on the performance of van der Waals materials-based electron devices W Cao, M Huang, CH Yeh, K Parto, K Banerjee
IEEE Transactions on Electron Devices 67 (3), 1310-1316, 2020
10 2020 Irradiation of Nanostrained Monolayer WSe2 for Site-Controlled Single-Photon Emission up to 150 K K Parto, K Banerjee, G Moody
arXiv preprint arXiv:2009.07315, 2020
9 2020 Purcell enhancement and polarization control of single-photon emitters in monolayer WSe2 using dielectric nanoantennas SI Azzam, K Parto, G Moody
Nanophotonics 12 (3), 477-484, 2023
8 2023 Interfacial thermal conductivity of 2D layered materials: An atomistic approach K Parto, A Pal, X Xie, W Cao, K Banerjee
2018 IEEE International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2018
6 2018 Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2 O3 Gate Dielectric for Chip Level Integration K Matsuura, M Hamada, T Hamada, H Tanigawa, T Sakamoto, W Cao, ...
2019 19th International Workshop on Junction Technology (IWJT), 1-4, 2019
4 2019 2018 IEEE SOI‐3D‐Subthreshold Microelectronics Technology Unified Conf.(S3S) J Jiang, K Parto, W Cao, K Banerjee
IEEE, 2018
4 2018 Surface Acoustic Wave Cavity Optomechanics with Atomically Thin SD Patel, K Parto, M Choquer, N Lewis, S Umezawa, L Hellman, ...
PRX Quantum 5 (1), 010330, 2024
2 2024 Cavity Optomechanics with WSe2 Single Photon Emitters SD Patel, K Parto, M Choquer, S Umezawa, L Hellman, D Polishchuk, ...
CLEO: Fundamental Science, FW3J. 2, 2023
2 2023 Surface Acoustic Wave Cavity Optomechanics with WSe SD Patel, K Parto, M Choquer, S Umezawa, L Hellman, D Polishchuk, ...
arXiv preprint arXiv:2211.15811, 2022
2 2022 Reliability and performance of CMOS-compatible multi-level graphene interconnects incorporating vias K Agashiwala, J Jiang, CH Yeh, K Parto, D Zhang, K Banerjee
2020 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2020
2 2020 Computational study of spin injection in 2D materials A Pal, K Parto, K Agashiwala, W Cao, K Banerjee
2019 IEEE International Electron Devices Meeting (IEDM), 24.2. 1-24.2. 4, 2019
2 2019 
Kaustav BanerjeeUC Santa Barbara, Stanford University, UC BerkeleyE-mail confirmado em ece.ucsb.edu
