Marilia J. Caldas
Marilia J. Caldas
Verified email at usp.br
Title
Cited by
Cited by
Year
Many-electron multiplet effects in the spectra of impurities in heteropolar semiconductors
A Fazzio, MJ Caldas, A Zunger
Physical Review B 30 (6), 3430, 1984
3421984
A universal trend in the binding energies of deep impurities in semiconductors
MJ Caldas, A Fazzio, A Zunger
Applied physics letters 45 (6), 671-673, 1984
2981984
Electronic structure of copper, silver, and gold impurities in silicon
A Fazzio, MJ Caldas, A Zunger
Physical Review B 32 (2), 934, 1985
931985
Anion-antisite-like defects in III-V compounds
MJ Caldas, J Dabrowski, A Fazzio, M Scheffler
Physical review letters 65 (16), 2046, 1990
721990
Separation of one- and many-electron effects in the excitation spectra of impurities in semiconductors
A Fazzio, M Caldas, A Zunger
Physical Review B 29 (10), 5999, 1984
501984
Theoretical investigation of the electrical and optical activity of vanadium in GaAs
MJ Caldas, SK Figueiredo, A Fazzio
Physical Review B 33 (10), 7102, 1986
401986
Point defects in covalent semiconductors: A molecular cluster model
A Fazzio, MJ Caldas, JR Leite
International Journal of Quantum Chemistry 16 (S13), 349-361, 1979
201979
Theoretical Study of the Si‐A Centre
MJ Caldas, JR Leite, A Fazzio
physica status solidi (b) 98 (2), K109-K111, 1980
151980
Multiple-scattering molecular-cluster model of complex defects in semiconductors: Application to Si: and Si: systems
MJ Caldas, JR Leite, A Fazzio
Physical Review B 25 (4), 2603, 1982
141982
Germanium negative-U center in GaAs
TM Schmidt, A Fazzio, MJ Caldas
Physical Review B 53 (3), 1315, 1996
131996
A molecular cluster study of complex defects in Si: The divacancy and the E center
A Fazzio, JR Leite, MJ Caldas
Physica B+ C 116 (1-3), 90-94, 1983
131983
Electronic structure calculation of V2+ O2 complexes in silicon
VMS Gomes, LVC Assali, JR Leite, MJ Caldas, A Fazzio
Solid state communications 49 (6), 537-539, 1984
101984
Defect-molecule parameters for the divacancy in silicon
VMS Gomes, LVC Assali, JR Leite, A Fazzio, MJ Caldas
Solid state communications 53 (10), 841-844, 1985
91985
Electronic Structure of Interfaces between Thiophene and TiO2 Nanostructures
M Alves-Santos, LMM Jorge, MJ Caldas, D Varsano
The Journal of Physical Chemistry C 118 (25), 13539-13544, 2014
82014
Electronic structure of oxygen in silicon
MJ Caldas, JR Leite, A Fazzio
Physica B+ C 116 (1-3), 106-111, 1983
81983
Correlation effects in native defects in GaAs
MJ Caldas, A Fazzio
Materials Science Forum 38, 119-124, 1989
71989
Anion–Antisite defects in GaAs: As and Sb
MJ Caldas, A Fazzio, J Dabrowski, M Scheffler
International Journal of Quantum Chemistry 38 (S24), 563-567, 1990
31990
Interaction between dangling bonds in vacancy-defects in silicon
MJ Caldas, A Fazzio
Revista Brasileira de Fisica 13 (1), 90-98, 1983
31983
Concavity effects on the optical properties of aromatic hydrocarbons
C Cocchi, D Prezzi, A Ruini, MJ Caldas, A Fasolino, E Molinari
The Journal of Physical Chemistry C 117 (24), 12909-12915, 2013
22013
Metastable transition of EL2 in GaAs: The electron-phonon-coupling channel
MJ Caldas, E Molinari
Solid state communications 89 (6), 493-496, 1994
21994
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