| Many-electron multiplet effects in the spectra of impurities in heteropolar semiconductors A Fazzio, MJ Caldas, A Zunger Physical Review B 30 (6), 3430, 1984 | 351 | 1984 |
| A universal trend in the binding energies of deep impurities in semiconductors MJ Caldas, A Fazzio, A Zunger Applied Physics Letters 45 (6), 671-673, 1984 | 324 | 1984 |
| Electronic structure of copper, silver, and gold impurities in silicon A Fazzio, MJ Caldas, A Zunger Physical Review B 32 (2), 934, 1985 | 102 | 1985 |
| Anion-antisite-like defects in III-V compounds MJ Caldas, J Dabrowski, A Fazzio, M Scheffler Physical review letters 65 (16), 2046, 1990 | 73 | 1990 |
| Separation of one- and many-electron effects in the excitation spectra of impurities in semiconductors A Fazzio, M Caldas, A Zunger Physical Review B 29 (10), 5999, 1984 | 53 | 1984 |
| Theoretical investigation of the electrical and optical activity of vanadium in GaAs MJ Caldas, SK Figueiredo, A Fazzio Physical Review B 33 (10), 7102, 1986 | 40 | 1986 |
| Zunger Alex 1984 MJ Caldas, A Fazzio Appl. Phys. Lett 45, 671, 0 | 20 | |
| Point defects in covalent semiconductors: A molecular cluster model A Fazzio, MJ Caldas, JR Leite International Journal of Quantum Chemistry 16 (S13), 349-361, 1979 | 19 | 1979 |
| Theoretical Study of the Si‐A Centre MJ Caldas, JR Leite, A Fazzio physica status solidi (b) 98 (2), K109-K111, 1980 | 17 | 1980 |
| Germanium negative-U center in GaAs TM Schmidt, A Fazzio, MJ Caldas Physical Review B 53 (3), 1315, 1996 | 15 | 1996 |
| Multiple-scattering molecular-cluster model of complex defects in semiconductors: Application to Si: and Si: systems MJ Caldas, JR Leite, A Fazzio Physical Review B 25 (4), 2603, 1982 | 14 | 1982 |
| A molecular cluster study of complex defects in Si: The divacancy and the E center A Fazzio, JR Leite, MJ Caldas Physica B+ C 116 (1-3), 90-94, 1983 | 13 | 1983 |
| Electronic Structure of Interfaces between Thiophene and TiO2 Nanostructures M Alves-Santos, LMM Jorge, MJ Caldas, D Varsano The Journal of Physical Chemistry C 118 (25), 13539-13544, 2014 | 11 | 2014 |
| Defect-molecule parameters for the divacancy in silicon VMS Gomes, LVC Assali, JR Leite, A Fazzio, MJ Caldas Solid state communications 53 (10), 841-844, 1985 | 9 | 1985 |
| Electronic structure calculation of V2+ O2 complexes in silicon VMS Gomes, LVC Assali, JR Leite, MJ Caldas, A Fazzio Solid state communications 49 (6), 537-539, 1984 | 9 | 1984 |
| Correlation effects in native defects in GaAs MJ Caldas, A Fazzio Materials Science Forum 38, 119-124, 1989 | 8 | 1989 |
| Electronic structure of oxygen in silicon MJ Caldas, JR Leite, A Fazzio Physica B+ C 116 (1-3), 106-111, 1983 | 6 | 1983 |
| Anion–Antisite defects in GaAs: As and Sb MJ Caldas, A Fazzio, J Dabrowski, M Scheffler International Journal of Quantum Chemistry 38 (S24), 563-567, 1990 | 4 | 1990 |
| Concavity effects on the optical properties of aromatic hydrocarbons C Cocchi, D Prezzi, A Ruini, MJ Caldas, A Fasolino, E Molinari The Journal of Physical Chemistry C 117 (24), 12909-12915, 2013 | 3 | 2013 |
| Metastable transition of EL2 in GaAs: The electron-phonon-coupling channel MJ Caldas, E Molinari Solid state communications 89 (6), 493-496, 1994 | 2 | 1994 |
