Sampling depth of total electron and fluorescence measurements in Si L-and K-edge absorption spectroscopy M Kasrai, WN Lennard, RW Brunner, GM Bancroft, JA Bardwell, KH Tan
Applied Surface Science 99 (4), 303-312, 1996
340 1996 Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy JB Webb, H Tang, S Rolfe, JA Bardwell
Applied physics letters 75 (7), 953-955, 1999
203 1999 Film thickness measurements of SiO2 by XPS DF Mitchell, KB Clark, JA Bardwell, WN Lennard, GR Massoumi, ...
Surface and Interface Analysis 21 (1), 44-50, 1994
200 1994 Properties of carbon-doped GaN H Tang, JB Webb, JA Bardwell, S Raymond, J Salzman, C Uzan-Saguy
Applied Physics Letters 78 (6), 757-759, 2001
183 2001 Ultraviolet photoenhanced wet etching of GaN in solution JA Bardwell, JB Webb, H Tang, J Fraser, S Moisa
Journal of Applied Physics 89 (7), 4142-4149, 2001
160 2001 In situ characterization of anodic silicon oxide films by AC impedance measurements P Schmuki, H Böhni, JA Bardwell
Journal of the Electrochemical Society 142 (5), 1705, 1995
134 1995 Use of 18O/SIMS and electrochemical techniques to study the reduction and breakdown of passive oxide films on iron JA Bardwell, B MacDougall, MJ Graham
Journal of the Electrochemical Society 135 (2), 413, 1988
93 1988 In situ XANES detection of Cr (VI) in the passive film on Fe‐26Cr JA Bardwell, GI Sproule, B MacDougall, MJ Graham, AJ Davenport, ...
Journal of the Electrochemical Society 139 (2), 371, 1992
81 1992 Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors SP McAlister, JA Bardwell, S Haffouz, H Tang
Journal of Vacuum Science & Technology A 24 (3), 624-628, 2006
75 2006 In situ XANES study of galvanostatic reduction of the passive film on iron AJ Davenport, JA Bardwell, CM Vitus
Journal of the Electrochemical Society 142 (3), 721, 1995
72 1995 AC impedance spectroscopy of the anodic film on zirconium in neutral solution JA Bardwell, MCH McKubre
Electrochimica acta 36 (3-4), 647-653, 1991
71 1991 AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method LH Huang, SH Yeh, CT Lee, H Tang, J Bardwell, JB Webb
IEEE electron device letters 29 (4), 284-286, 2008
70 2008 Thin anodic oxides formed on GaAs in aqueous solutions P Schmuki, GI Sproule, JA Bardwell, ZH Lu, MJ Graham
Journal of applied physics 79 (9), 7303-7311, 1996
69 1996 Extensions of the Kramers–Kronig transformation that cover a wide range of practical spectroscopic applications JA Bardwell, MJ Dignam
The Journal of chemical physics 83 (11), 5468-5478, 1985
69 1985 A simple wet etch for GaN JA Bardwell, IG Foulds, JB Webb, H Tang, J Fraser, S Moisa, SJ Rolfe
Journal of electronic materials 28, L24-L26, 1999
68 1999 Nature of the passive film on Fe-Cr alloys as studied by 18O secondary ion mass spectrometry: reduction of the prior film and stability to ex situ surface analysis JA Bardwell, GI Sproule, DF Mitchell, B MacDougall, MJ Graham
Journal of the chemical society. Faraday transactions 87 (7), 1011-1019, 1991
62 1991 Pitting of iron by chloride in borate buffer solution: role of the anodic oxide film JA Bardwell, B MacDougall
Journal of the Electrochemical Society 135 (9), 2157, 1988
56 1988 Growth and characterization of anodic oxides on Si (100) formed in 0.1 M hydrochloric acid JA Bardwell, N Draper, P Schmuki
Journal of applied physics 79 (11), 8761-8769, 1996
54 1996 AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy S Haffouz, H Tang, JA Bardwell, EM Hsu, JB Webb, S Rolfe
Solid-state electronics 49 (5), 802-807, 2005
53 2005 Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy F González-Posada, JA Bardwell, S Moisa, S Haffouz, H Tang, AF Brana, ...
Applied surface science 253 (14), 6185-6190, 2007
52 2007