| Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2204904, 2023 | 51 | 2023 |
| Time-varying data processing with nonvolatile memristor-based temporal kernel YH Jang, W Kim, J Kim, KS Woo, HJ Lee, JW Jeon, SK Shim, J Han, ... Nature communications 12 (1), 5727, 2021 | 50 | 2021 |
| 2D Electron Gas at the Interface of Atomic‐Layer‐Deposited Al2O3/TiO2 on SrTiO3 Single Crystal Substrate HJ Lee, T Moon, CH An, CS Hwang Advanced Electronic Materials 5 (1), 1800527, 2019 | 22 | 2019 |
| Negative differential capacitance in ultrathin ferroelectric hafnia S Jo, H Lee, DH Choe, JH Kim, YS Lee, O Kwon, S Nam, Y Park, K Kim, ... Nature Electronics 6 (5), 390-397, 2023 | 15 | 2023 |
| Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor HJ Lee, T Moon, SD Hyun, S Kang, CS Hwang Advanced Electronic Materials 7 (1), 2000876, 2021 | 12 | 2021 |
| Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface T Moon, HJ Lee, SD Hyun, BS Kim, HH Kim, CS Hwang Advanced Electronic Materials 6 (6), 1901286, 2020 | 11 | 2020 |
| Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films HJ Lee, T Moon, S Kang, W Kim, CS Hwang ACS Applied Electronic Materials 3 (7), 3247-3255, 2021 | 10 | 2021 |
| In operando optical tracking of oxygen vacancy migration and phase change in few nanometers ferroelectric HZO memories A Jan, T Rembert, S Taper, J Symonowicz, N Strkalj, T Moon, YS Lee, ... Advanced Functional Materials 33 (22), 2214970, 2023 | 7 | 2023 |
| Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 T Moon, HJ Lee, KD Kim, YH Lee, SD Hyun, HW Park, YB Lee, BS Kim, ... Advanced Electronic Materials 4 (12), 1800388, 2018 | 7 | 2018 |
| Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing T Moon, HJ Lee, S Nam, H Bae, DH Choe, S Jo, YS Lee, Y Park, JJ Yang, ... Neuromorphic Computing and Engineering 3 (2), 024001, 2023 | 3 | 2023 |
| An analytical interpretation of the memory window in ferroelectric field-effect transistors S Yoo, DH Choe, HJ Lee, S Jo, YS Lee, Y Park, KH Kim, D Kim, SG Nam Applied Physics Letters 123 (22), 2023 | 1 | 2023 |
| Surface-functionalized Hafnia with bespoke ferroelectric properties for memory and logic applications DH Choe, H Bae, H Lee, Y Lee, T Moon, SG Nam, S Jo, HJ Lee, E Lee, ... 2021 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2021 | 1 | 2021 |
| Laminated Ferroelectric FET With Large Memory Window and High Reliability HJ Lee, S Nam, Y Lee, K Kim, DH Choe, S Yoo, Y Park, S Jo, D Kim, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Interfacial Layer Selection Methodology for Customized Ferroelectric Memories HJ Lee, T Moon, S Nam, H Bae, DH Choe, S Jo, Y Lee, Y Park, K Kim, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
