Effect of strain compensation on quantum dot enhanced GaAs solar cells SM Hubbard, CD Cress, CG Bailey, RP Raffaelle, SG Bailey, DM Wilt
Applied Physics Letters 92 (12), 2008
508 2008 Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
175 2002 Impact of dislocation densities on n+∕ p and p+∕ n junction GaAs diodes and solar cells on SiGe virtual substrates CL Andre, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel
Journal of applied physics 98 (1), 2005
162 2005 Detecting electrical activity from Martian dust storms WM Farrell, ML Kaiser, MD Desch, JG Houser, SA Cummer, DM Wilt, ...
Journal of Geophysical Research: Planets 104 (E2), 3795-3801, 1999
124 1999 Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates CL Andre, JA Carlin, JJ Boeckl, DM Wilt, MA Smith, AJ Pitera, ML Lee, ...
IEEE Transactions on Electron Devices 52 (6), 1055-1060, 2005
123 2005 Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates CL Andre, JJ Boeckl, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, BM Keyes, ...
Applied physics letters 84 (18), 3447-3449, 2004
120 2004 Monolithic interconnected modules (MIMs) for thermophotovoltaic energy conversion D Wilt, R Wehrer, M Palmisiano, M Wanlass, C Murray
Semiconductor Science and Technology 18 (5), S209, 2003
76 2003 InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance CD Cress, BJ Landi, RP Raffaelle, DM Wilt
Journal of applied physics 100 (11), 2006
66 2006 Evidence for Martian electrostatic charging and abrasive wheel wear from the Wheel Abrasion Experiment on the Pathfinder Sojourner rover DC Ferguson, JC Kolecki, MW Siebert, DM Wilt, JR Matijevic
Journal of Geophysical Research: Planets 104 (E4), 8747-8759, 1999
62 1999 Quantum dot solar cell tolerance to alpha-particle irradiation CD Cress, SM Hubbard, BJ Landi, RP Raffaelle, DM Wilt
Applied Physics Letters 91 (18), 2007
61 2007 Correlation of electron radiation induced-damage in GaAs solar cells JH Warner, SR Messenger, RJ Walters, GP Summers, JR Lorentzen, ...
IEEE Transactions on nuclear science 53 (4), 1988-1994, 2006
58 2006 MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion SL Murray, FD Newman, CS Murray, DM Wilt, MW Wanlass, P Ahrenkiel, ...
Semiconductor science and technology 18 (5), S202, 2003
58 2003 High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems DM Wilt, NS Fatemi, RW Hoffman Jr, PP Jenkins, DJ Brinker, D Scheiman, ...
Applied physics letters 64 (18), 2415-2417, 1994
57 1994 Applied Physics Letters DM Wilt, NS Fatemi, RW Huffman Jr, PP Jenkins, DJ Brinker, ...
Applied physics letters 64, 18, 1994
55 1994 Multi-junction solar cell spectral tuning with quantum dots RP Raffaelle, S Sinharoy, J Andersen, DM Wilt, SG Bailey
2006 IEEE 4th World Conference on Photovoltaic Energy Conference 1, 162-166, 2006
52 2006 Thermophotovoltaics for space power applications D Wilt, D Chubb, D Wolford, P Magari, C Crowley
AIP Conference Proceedings 890 (1), 335-345, 2007
48 2007 High-quality step-graded buffer by molecular-beam epitaxy MK Hudait, Y Lin, DM Wilt, JS Speck, CA Tivarus, ER Heller, JP Pelz, ...
Applied physics letters 82 (19), 3212-3214, 2003
47 2003 Countdown to perovskite space launch: Guidelines to performing relevant radiation-hardness experiments AR Kirmani, BK Durant, J Grandidier, NM Haegel, MD Kelzenberg, ...
Joule 6 (5), 1015-1031, 2022
46 2022 Short circuit current enhancement of GaAs solar cells using strain compensated InAs quantum dots SM Hubbard, CG Bailey, CD Cress, S Polly, J Clark, DV Forbes, ...
2008 33rd IEEE Photovoltaic Specialists Conference, 1-6, 2008
44 2008 InGaAs PV device development for TPV power systems DM Wilt, S Fatemi, RW Hoffman Jr, PP Jenkins, D Scheiman, R Lowe, ...
AIP Conference Proceedings 321 (1), 210-220, 1995
40 1995