Russell G Egdell or edgell rg
Russell G Egdell or edgell rg
Professor of Inorganic Chemistry, University of Oxford
E-mail confirmado em chem.ox.ac.uk
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Nature of the Band Gap of Revealed by First-Principles Calculations and X-Ray Spectroscopy
A Walsh, JLF Da Silva, SH Wei, C Körber, A Klein, LFJ Piper, A DeMasi, ...
Physical review letters 100 (16), 167402, 2008
6412008
Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2
DO Scanlon, GW Watson, DJ Payne, GR Atkinson, RG Egdell, DSL Law
The Journal of Physical Chemistry C 114 (10), 4636-4645, 2010
4412010
Stereochemistry of post-transition metal oxides: revision of the classical lone pair model
A Walsh, DJ Payne, RG Egdell, GW Watson
Chemical Society Reviews 40 (9), 4455-4463, 2011
3942011
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral
PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ...
Physical Review B 79 (20), 205211, 2009
3792009
Photoemission and STM study of the electronic structure of Nb-doped TiO 2
D Morris, Y Dou, J Rebane, CEJ Mitchell, RG Egdell, DSL Law, A Vittadini, ...
Physical Review B 61 (20), 13445, 2000
3002000
Surface Electron Accumulation and the Charge Neutrality Level in
PDC King, TD Veal, DJ Payne, A Bourlange, RG Egdell, CF McConville
Physical review letters 101 (11), 116808, 2008
2452008
Band structure of indium oxide: Indirect versus direct band gap
P Erhart, A Klein, RG Egdell, K Albe
Physical review B 75 (15), 153205, 2007
2082007
Surface properties of antimony doped tin (IV) oxide: a study by electron spectroscopy
PA Cox, RG Egdell, C Harding, WR Patterson, PJ Tavener
Surface Science 123 (2-3), 179-203, 1982
2041982
The metal-to-semiconductor transition in ternary ruthenium (IV) oxides: a study by electron spectroscopy
PA Cox, RG Egdell, JB Goodenough, A Hamnett, CC Naish
Journal of Physics C: Solid State Physics 16 (32), 6221, 1983
1961983
Electronic origins of structural distortions in post-transition metal oxides: experimental and theoretical evidence for a revision of the lone pair model
DJ Payne, RG Egdell, A Walsh, GW Watson, J Guo, PA Glans, ...
Physical review letters 96 (15), 157403, 2006
1952006
P-type transparent conducting oxides
KHL Zhang, K Xi, MG Blamire, RG Egdell
Journal of Physics: Condensed Matter 28 (38), 383002, 2016
1872016
Thionine coated electrode for photogalvanic cells
WJ Albery, AW Foulds, KJ Hall, AR Hillman, RG Egdell, AF Orchard
Nature 282 (5741), 793-797, 1979
164*1979
The electronic structure of Bi2− xGdxRu2O7 and RuO2: A study by electron spectroscopy
PA Cox, JB Goodenough, PJ Tavener, D Telles, RG Egdell
Journal of Solid State Chemistry 62 (3), 360-370, 1986
1551986
High resolution x-ray photoemission study of plasma oxidation of indium–tin–oxide thin film surfaces
V Christou, M Etchells, O Renault, PJ Dobson, OV Salata, G Beamson, ...
Journal of Applied Physics 88 (9), 5180-5187, 2000
1512000
Initial and final state effects in photoemission from Au nanoclusters on TiO2 (110)
A Howard, DNS Clark, CEJ Mitchell, RG Egdell, VR Dhanak
Surface science 518 (3), 210-224, 2002
1482002
Competition between initial-and final-state effects in valence-and core-level x-ray photoemission of Sb-doped SnO 2
RG Egdell, J Rebane, TJ Walker, DSL Law
Physical Review B 59 (3), 1792, 1999
1331999
Shallow donor state of hydrogen in and : Implications for conductivity in transparent conducting oxides
PDC King, RL Lichti, YG Celebi, JM Gil, RC Vilão, HV Alberto, JP Duarte, ...
Physical Review B 80 (8), 081201, 2009
1302009
Direct observation of behaviour of Au nanoclusters on TiO2 (1 1 0) at elevated temperatures
CEJ Mitchell, A Howard, M Carney, RG Egdell
Surface science 490 (1-2), 196-210, 2001
1302001
Influence of shallow core-level hybridization on the electronic structure of post-transition-metal oxides studied using soft X-ray emission and absorption
C McGuinness, CB Stagarescu, PJ Ryan, JE Downes, D Fu, KE Smith, ...
Physical Review B 68 (16), 165104, 2003
1292003
Oxygen deficient SnO2 (110) and TiO2 (110): A comparative study by photoemission
RG Egdell, S Eriksen, WR Flavell
Solid state communications 60 (10), 835-838, 1986
1181986
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