Seguir
Daewoong Kwon
Daewoong Kwon
Hanyang University
Nenhum e-mail foi confirmado
Título
Citado por
Citado por
Ano
Enhanced ferroelectricity in ultrathin films grown directly on silicon
SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
6932020
Spatially resolved steady-state negative capacitance
AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ...
Nature 565 (7740), 468-471, 2019
3462019
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
1902022
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors
D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ...
IEEE Electron Device Letters 39 (2), 300-303, 2017
1732017
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
D Kwon, S Cheema, N Shanker, K Chatterjee, YH Liao, AJ Tan, C Hu, ...
IEEE Electron Device Letters 40 (6), 993-996, 2019
1312019
One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon
SS Cheema, N Shanker, CH Hsu, A Datar, J Bae, D Kwon, S Salahuddin
Advanced Electronic Materials 8 (6), 2100499, 2022
1032022
Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ...
IEEE Electron Device Letters 41 (2), 240-243, 2019
632019
Wakeup-free and endurance-robust ferroelectric field-effect transistor memory using high pressure annealing
MC Nguyen, S Kim, K Lee, JY Yim, R Choi, D Kwon
IEEE Electron Device Letters 42 (9), 1295-1298, 2021
612021
Highly scaled, high endurance, Ω-gate, nanowire ferroelectric FET memory transistors
JH Bae, D Kwon, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin
IEEE Electron Device Letters 41 (11), 1637-1640, 2020
572020
Negative capacitance, n-channel, Si FinFETs: Bi-directional sub-60 mV/dec, negative DIBL, negative differential resistance and improved short channel effect
H Zhou, D Kwon, AB Sachid, Y Liao, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 53-54, 2018
542018
Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack
D Kwon, S Cheema, YK Lin, YH Liao, K Chatterjee, AJ Tan, C Hu, ...
IEEE Electron Device Letters 41 (1), 179-182, 2019
472019
Effects of high-pressure annealing on the low-frequency noise characteristics in ferroelectric FET
W Shin, JH Bae, S Kim, K Lee, D Kwon, BG Park, D Kwon, JH Lee
IEEE Electron Device Letters 43 (1), 13-16, 2021
452021
Response speed of negative capacitance FinFETs
D Kwon, YH Liao, YK Lin, JP Duarte, K Chatterjee, AJ Tan, AK Yadav, ...
2018 IEEE Symposium on VLSI Technology, 49-50, 2018
452018
A nitrided interfacial oxide for interface state improvement in hafnium zirconium oxide-based ferroelectric transistor technology
AJ Tan, AK Yadav, K Chatterjee, D Kwon, S Kim, C Hu, S Salahuddin
IEEE Electron Device Letters 39 (1), 95-98, 2017
412017
Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation
K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ...
IEEE Electron Device Letters 40 (9), 1423-1426, 2019
382019
Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy
W Shin, KK Min, JH Bae, J Yim, D Kwon, Y Kim, J Yu, J Hwang, BG Park, ...
Nanoscale 14 (6), 2177-2185, 2022
342022
Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles
C Mahata, H Algadi, M Ismail, D Kwon, S Kim
Journal of Materials Science & Technology 95, 203-212, 2021
342021
Capacitive neural network using charge-stored memory cells for pattern recognition applications
D Kwon, IY Chung
IEEE Electron device letters 41 (3), 493-496, 2020
342020
Method of initializing 3D non-volatile memory device
BG Park, DW Kwon, DB Kim, SH Lee
US Patent 9,685,235, 2017
342017
Ferroelectric-gate field-effect transistor memory with recessed channel
K Lee, JH Bae, S Kim, JH Lee, BG Park, D Kwon
IEEE Electron Device Letters 41 (8), 1201-1204, 2020
322020
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20