Jack Zhang
Jack Zhang
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Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ...
Applied Physics Letters 99 (23), 232116, 2011
High-mobility BaSnO3 grown by oxide molecular beam epitaxy
S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer
Apl Materials 4 (1), 016106, 2016
Three-dimensional imaging of individual dopant atoms in SrTiO 3
J Hwang, JY Zhang, AJ D’Alfonso, LJ Allen, S Stemmer
Physical review letters 111 (26), 266101, 2013
Structural origins of the properties of rare earth nickelate superlattices
J Hwang, J Son, JY Zhang, A Janotti, CG Van de Walle, S Stemmer
Physical Review B 87 (6), 060101, 2013
Transport in ferromagnetic heterostructures
P Moetakef, JY Zhang, A Kozhanov, B Jalan, R Seshadri, SJ Allen, ...
Applied Physics Letters 98 (11), 112110, 2011
Symmetry lowering in extreme-electron-density perovskite quantum wells
JY Zhang, J Hwang, S Raghavan, S Stemmer
Physical review letters 110 (25), 256401, 2013
Nanoscale quantification of octahedral tilts in perovskite films
J Hwang, JY Zhang, J Son, S Stemmer
Applied Physics Letters 100 (19), 191909, 2012
Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate
P Moetakef, JY Zhang, S Raghavan, AP Kajdos, S Stemmer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (4 …, 2013
Quantum critical behaviour in confined SrTiO3 quantum wells embedded in antiferromagnetic SmTiO3
CA Jackson, JY Zhang, CR Freeze, S Stemmer
Nature communications 5 (1), 1-6, 2014
Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films
AJ Hauser, E Mikheev, NE Moreno, J Hwang, JY Zhang, S Stemmer
Applied Physics Letters 106 (9), 092104, 2015
Growth and properties of GdTiO3 films prepared by hybrid molecular beam epitaxy
P Moetakef, DG Ouellette, JY Zhang, TA Cain, SJ Allen, S Stemmer
Journal of crystal growth 355 (1), 166-170, 2012
Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO 3 quantum wells
JY Zhang, CA Jackson, R Chen, S Raghavan, P Moetakef, L Balents, ...
Physical Review B 89 (7), 075140, 2014
Direct Observation of Sr Vacancies in by Quantitative Scanning Transmission Electron Microscopy
H Kim, JY Zhang, S Raghavan, S Stemmer
Physical Review X 6 (4), 041063, 2016
Carrier density independent scattering rate in SrTiO3-based electron liquids
E Mikheev, S Raghavan, JY Zhang, PB Marshall, AP Kajdos, L Balents, ...
Scientific reports 6 (1), 1-8, 2016
APL Mater. 4, 016106 (2016)
S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer
Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
V Chobpattana, TE Mates, WJ Mitchell, JY Zhang, S Stemmer
Journal of Applied Physics 114 (15), 154108, 2013
Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films
JY Zhang, H Kim, E Mikheev, AJ Hauser, S Stemmer
Scientific Reports 6 (1), 1-7, 2016
Probing the Metal-Insulator Transition in by Electrostatic Doping
S Raghavan, JY Zhang, OF Shoron, S Stemmer
Physical Review Letters 117 (3), 037602, 2016
Gaps and pseudogaps in perovskite rare earth nickelates
SJ Allen, AJ Hauser, E Mikheev, JY Zhang, NE Moreno, J Son, ...
APL materials 3 (6), 062503, 2015
Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities
V Chobpattana, E Mikheev, JY Zhang, TE Mates, S Stemmer
Journal of Applied Physics 116 (12), 124104, 2014
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