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Harshit Agarwal
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BSIM6: Analog and RF compact model for bulk MOSFET
YS Chauhan, S Venugopalan, MA Chalkiadaki, MAU Karim, H Agarwal, ...
IEEE Transactions on Electron Devices 61 (2), 234-244, 2013
1412013
Engineering negative differential resistance in NCFETs for analog applications
H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, MY Kao, ...
IEEE Transactions on Electron Devices 65 (5), 2033-2039, 2018
1032018
BSIM-CMG: Standard FinFET compact model for advanced circuit design
JP Duarte, S Khandelwal, A Medury, C Hu, P Kushwaha, H Agarwal, ...
ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015
1002015
Proposal for capacitance matching in negative capacitance field-effect transistors
H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, A Dasgupta, ...
IEEE Electron Device Letters 40 (3), 463-466, 2019
842019
BSIM compact model of quantum confinement in advanced nanosheet FETs
A Dasgupta, SS Parihar, P Kushwaha, H Agarwal, MY Kao, S Salahuddin, ...
IEEE Transactions on Electron Devices 67 (2), 730-737, 2020
532020
Analysis and modeling of inner fringing field effect on negative capacitance FinFETs
YK Lin, H Agarwal, P Kushwaha, MY Kao, YH Liao, K Chatterjee, ...
IEEE Transactions on Electron Devices 66 (4), 2023-2027, 2019
472019
Spacer engineering in negative capacitance FinFETs
YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ...
IEEE Electron Device Letters 40 (6), 1009-1012, 2019
452019
Design Optimization Techniques in Nanosheet Transistor for RF Applications
P Kushwaha, A Dasgupta, MY Kao, H Agarwal, S Salahuddin, C Hu
IEEE Transactions on Electron Devices 67 (10), 4515-4520, 2020
442020
NCFET design considering maximum interface electric field
H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, JP Duarte, ...
IEEE Electron Device Letters 39 (8), 1254-1257, 2018
442018
Variation caused by spatial distribution of dielectric and ferroelectric grains in a negative capacitance field-effect transistor
MY Kao, AB Sachid, YK Lin, YH Liao, H Agarwal, P Kushwaha, JP Duarte, ...
IEEE Transactions on Electron Devices 65 (10), 4652-4658, 2018
412018
BSIM compact MOSFET models for SPICE simulation
YS Chauhan, S Venugopalan, N Paydavosi, P Kushwaha, S Jandhyala, ...
Proceedings of the 20th International Conference Mixed Design of Integrated …, 2013
392013
Characterization and modeling of flicker noise in FinFETs at advanced technology node
P Kushwaha, H Agarwal, YK Lin, A Dasgupta, MY Kao, Y Lu, Y Yue, ...
IEEE Electron Device Letters 40 (6), 985-988, 2019
382019
Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved Sensitivity in Presence of Parasitic Capacitance
H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, HL Chang, ...
IEEE Transactions on Electron Devices 65 (3), 1211-1216, 2018
342018
Modeling the impact of substrate depletion in FDSOI MOSFETs
P Kushwaha, N Paydavosi, S Khandelwal, C Yadav, H Agarwal, ...
Solid-State Electronics 104, 6-11, 2015
332015
Recent enhancements in BSIM6 bulk MOSFET model
H Agarwal, S Venugopalan, MA Chalkiadaki, N Paydavosi, JP Duarte, ...
2013 International Conference on Simulation of Semiconductor Processes and …, 2013
302013
BSIM-HV: High-voltage MOSFET model including quasi-saturation and self-heating effect
H Agarwal, C Gupta, R Goel, P Kushwaha, YK Lin, MY Kao, JP Duarte, ...
IEEE Transactions on Electron Devices 66 (10), 4258-4263, 2019
292019
Compact model for geometry dependent mobility in nanosheet FETs
A Dasgupta, SS Parihar, H Agarwal, P Kushwaha, YS Chauhan, C Hu
IEEE Electron Device Letters 41 (3), 313-316, 2020
282020
Optimization of NCFET by matching dielectric and ferroelectric nonuniformly along the channel
MY Kao, YK Lin, H Agarwal, YH Liao, P Kushwaha, A Dasgupta, ...
IEEE Electron Device Letters 40 (5), 822-825, 2019
242019
Unified compact model covering drift-diffusion to ballistic carrier transport
S Khandelwal, H Agarwal, P Kushwaha, JP Duarte, A Medury, ...
IEEE Electron Device Letters 37 (2), 134-137, 2015
242015
Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model
H Agarwal, C Gupta, P Kushwaha, C Yadav, JP Duarte, S Khandelwal, ...
IEEE journal of the Electron Devices Society 3 (3), 240-243, 2015
242015
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