| Physical model for the low-dose-rate effect in bipolar devices J Boch, F Saigné, RD Schrimpf, JR Vaille, L Dusseau, E Lorfevre IEEE transactions on nuclear science 53 (6), 3655-3660, 2006 | 94 | 2006 |
| Criterion for SEU occurrence in SRAM deduced from circuit and device simulations in case of neutron-induced SER T Merelle, H Chabane, JM Palau, K Castellani-Coulie, F Wrobel, F Saigné, ... IEEE transactions on nuclear science 52 (4), 1148-1155, 2005 | 82 | 2005 |
| Dose rate effects in bipolar oxides: Competition between trap filling and recombination J Boch, F Saigné, AD Touboul, S Ducret, JF Carlotti, M Bernard, ... Applied physics letters 88 (23), 2006 | 70 | 2006 |
| Total-dose and single-event effects in DC/DC converter control circuitry PC Adell, RD Schrimpf, WT Holman, J Boch, J Stacey, P Ribero, ... IEEE Transactions on Nuclear Science 50 (6), 1867-1872, 2003 | 68 | 2003 |
| Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments J Boch, F Saigné, RD Schrimpf, JR Vaille, L Dusseau, S Ducret, ... IEEE transactions on nuclear science 52 (6), 2616-2621, 2005 | 61 | 2005 |
| Effect of switching from high to low dose rate on linear bipolar technology radiation response J Boch, F Saigne, RD Schrimpf, DM Fleetwood, S Ducret, L Dusseau, ... IEEE Transactions on Nuclear Science 51 (5), 2896-2902, 2004 | 51 | 2004 |
| Temperature effect on heavy-ion induced parasitic current on SRAM by device simulation: Effect on SEU sensitivity D Truyen, J Boch, B Sagnes, N Renaud, E Leduc, S Arnal, F Saigné IEEE Transactions on Nuclear Science 54 (4), 1025-1029, 2007 | 46 | 2007 |
| Prediction of multiple cell upset induced by heavy ions in a 90 nm bulk SRAM V Correas, F Saigné, B Sagnes, F Wrobel, J Boch, G Gasiot, P Roche IEEE Transactions on Nuclear Science 56 (4), 2050-2055, 2009 | 43 | 2009 |
| Innovative simulations of heavy ion cross sections in 130 nm CMOS SRAM V Correas, F Saigné, B Sagnes, J Boch, G Gasiot, D Giot, P Roche IEEE Transactions on Nuclear Science 54 (6), 2413-2418, 2007 | 43 | 2007 |
| The use of a dose-rate switching technique to characterize bipolar devices J Boch, YG Velo, F Saigné, NJH Roche, RD Schrimpf, JR Vaille, ... IEEE transactions on Nuclear Science 56 (6), 3347-3353, 2009 | 41 | 2009 |
| Neutron-induced SEU in SRAMs: Simulations with n-Si and nO interactions D Lambert, J Baggio, G Hubert, V Ferlet-Cavrois, O Flament, F Saigné, ... IEEE transactions on nuclear science 52 (6), 2332-2339, 2005 | 41 | 2005 |
| Analysis of quasi-monoenergetic neutron and proton SEU cross sections for terrestrial applications D Lambert, J Baggio, G Hubert, P Paillet, S Girard, V Ferlet-Cavrois, ... IEEE transactions on nuclear science 53 (4), 1890-1896, 2006 | 39 | 2006 |
| Impact of total ionizing dose on the analog single event transient sensitivity of a linear bipolar integrated circuit MF Bernard, L Dusseau, S Buchner, D McMorrow, R Ecoffet, J Boch, ... IEEE Transactions on Nuclear Science 6 (54), 2534-2540, 2007 | 37 | 2007 |
| Temperature effect on geminate recombination J Boch, F Saigné, L Dusseau, RD Schrimpf Applied physics letters 89 (4), 2006 | 37 | 2006 |
| Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs J Boch, F Saigné, RD Schrimpf, DM Fleetwood, R Cizmarik, D Zander IEEE Transactions on Nuclear Science 51 (5), 2903-2907, 2004 | 36 | 2004 |
| Investigation and analysis of LM124 bipolar linear circuitry response phenomenon in pulsed X-ray environment NJH Roche, L Dusseau, JR Vaillé, J Mekki, YG Velo, S Perez, J Boch, ... IEEE Transactions on Nuclear Science 57 (6), 3392-3399, 2010 | 31 | 2010 |
| Review and analysis of the radiation-induced degradation observed for the input bias current of linear integrated circuits L Dusseau, M Bernard, J Boch, YG Velo, N Roche, E Lorfevre, F Bezerra, ... IEEE Transactions on Nuclear Science 55 (6), 3174-3181, 2008 | 31 | 2008 |
| Modeling and investigations on TID-ASETs synergistic effect in LM124 operational amplifier from three different manufacturers F Roig, L Dusseau, A Khachatrian, NJH Roche, A Privat, JR Vaillé, J Boch, ... IEEE Transactions on Nuclear Science 60 (6), 4430-4438, 2013 | 29 | 2013 |
| Thermal runaway in SiC Schottky barrier diodes caused by heavy ions S Kuboyama, E Mizuta, Y Nakada, H Shindou, A Michez, J Boch, ... IEEE Transactions on Nuclear Science 66 (7), 1688-1693, 2019 | 27 | 2019 |
| ECORCE: A TCAD tool for total ionizing dose and single event effect modeling A Michez, S Dhombres, J Boch IEEE Transactions on Nuclear Science 62 (4), 1516-1527, 2015 | 26 | 2015 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityE-mail confirmado em vanderbilt.edu
