Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing SW Huang, JG Hwu
IEEE Transactions on Electron Devices 50 (7), 1658-1664, 2003
53 2003 Enhancement of silicon oxidation rate due to tensile mechanical stress JY Yen, JG Hwu
Applied Physics Letters 76 (14), 1834-1835, 2000
52 2000 An on-chip temperature sensor by utilizing a MOS tunneling diode YH Shih, JG Hwu
IEEE Electron Device Letters 22 (6), 299-301, 2001
51 2001 Stress effect on the kinetics of silicon thermal oxidation JY Yen, JG Hwu
Journal of Applied Physics 89 (5), 3027-3032, 2001
48 2001 High-k Al/sub 2/O/sub 3/gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing CS Kuo, JF Hsu, SW Huang, LS Lee, MJ Tsai, JG Hwu
IEEE Transactions on Electron Devices 51 (6), 854-858, 2004
44 2004 Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides JY Cheng, CT Huang, JG Hwu
Journal of Applied Physics 106 (7), 2009
41 2009 High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection YH Shih, SR Lin, TM Wang, JG Hwu
IEEE Transactions on Electron Devices 51 (9), 1514-1521, 2004
40 2004 Subthreshold swing reduction by double exponential control mechanism in an MOS gated-MIS tunnel transistor CS Liao, JG Hwu
IEEE Transactions on Electron Devices 62 (6), 2061-2065, 2015
39 2015 Photosensing by edge Schottky barrier height modulation induced by lateral diffusion current in MOS (p) photodiode YK Lin, JG Hwu
IEEE Transactions on Electron Devices 61 (9), 3217-3222, 2014
37 2014 Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation SW Huang, JG Hwu
IEEE transactions on electron devices 51 (11), 1877-1882, 2004
36 2004 Characterization of Edge Fringing Effect on the JY Cheng, JG Hwu
IEEE transactions on electron devices 59 (3), 565-572, 2011
29 2011 Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high-k material JY Cheng, HT Lu, JG Hwu
Applied Physics Letters 96 (23), 2010
29 2010 Clockwise C‐V hysteresis phenomena of metal–tantalum‐oxide–silicon‐oxide–silicon (p) capacitors due to leakage current through tantalum oxide JG Hwu, MJ Jeng, WS Wang, YK Tu
Journal of applied physics 62 (10), 4277-4283, 1987
28 1987 Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO2 TY Chen, JG Hwu
Applied Physics Letters 101 (7), 2012
27 2012 Ultralow leakage characteristics of ultrathin gate oxides (/spl sim/3 nm) prepared by anodization followed by high-temperature annealing CC Ting, YH Shih, JG Hwu
IEEE Transactions on Electron Devices 49 (1), 179-181, 2002
27 2002 Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification MJ Jeng, JG Hwu
IEEE Electron Device Letters 17 (12), 575-577, 1996
27 1996 A circuit design for the improvement of radiation hardness in CMOS digital circuits CC Chen, SC Liu, CC Hsiao, JG Hwu
IEEE transactions on nuclear science 39 (2), 272-277, 1992
27 1992 Lateral nonuniformity of effective oxide charges in MOS capacitors with Al/sub 2/O/sub 3/gate dielectrics SW Huang, JG Hwu
IEEE Transactions on electron devices 53 (7), 1608-1614, 2006
24 2006 Analog maximum, median and minimum circuit SI Liu, P Chen, CY Chen, JG Hwu
1997 IEEE International Symposium on Circuits and Systems (ISCAS) 1, 257-260, 1997
23 1997 Enhancement of transient two-states characteristics in metal-insulator-semiconductor structure by thinning metal thickness KH Tseng, CS Liao, JG Hwu
IEEE Transactions on Nanotechnology 16 (6), 1011-1015, 2017
22 2017 