| Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices S Rathi, I Lee, D Lim, J Wang, Y Ochiai, N Aoki, K Watanabe, T Taniguchi, ... Nano letters 15 (8), 5017-5024, 2015 | 167 | 2015 |
| Dielectrophoretic assembly of Pt nanoparticle-reduced graphene oxide nanohybrid for highly-sensitive multiple gas sensor J Wang, S Rathi, B Singh, I Lee, S Maeng, HI Joh, GH Kim Sensors and Actuators B: Chemical 220, 755-761, 2015 | 103 | 2015 |
| Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates C Lee, S Rathi, MA Khan, D Lim, Y Kim, SJ Yun, DH Youn, K Watanabe, ... Nanotechnology 29 (33), 335202, 2018 | 86 | 2018 |
| Dielectrophoresis of graphene oxide nanostructures for hydrogen gas sensor at room temperature J Wang, B Singh, JH Park, S Rathi, I Lee, S Maeng, HI Joh, CH Lee, ... Sensors and Actuators B: Chemical 194, 296-302, 2014 | 85 | 2014 |
| Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2 /MoS2 Heterostructure for Ambipolar Field-Effect Transistors. I Lee, S Rathi, D Lim, L Li, J Park, Y Lee, KS Yi, KP Dhakal, J Kim, C Lee, ... Advanced Materials (Deerfield Beach, Fla.) 28 (43), 9519-9525, 2016 | 78 | 2016 |
| Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate M Kang, S Rathi, I Lee, D Lim, J Wang, L Li, MA Khan, GH Kim Applied Physics Letters 106 (14), 2015 | 70 | 2015 |
| Alternating current dielectrophoresis optimization of Pt-decorated graphene oxide nanostructures for proficient hydrogen gas sensor J Wang, S Rathi, B Singh, I Lee, HI Joh, GH Kim ACS applied materials & interfaces 7 (25), 13768-13775, 2015 | 51 | 2015 |
| Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe2 field-effect transistor I Lee, S Rathi, L Li, D Lim, MA Khan, ES Kannan, GH Kim Nanotechnology 26 (45), 455203, 2015 | 47 | 2015 |
| Tunable electrical properties of multilayer HfSe 2 field effect transistors by oxygen plasma treatment M Kang, S Rathi, I Lee, L Li, MA Khan, D Lim, Y Lee, J Park, SJ Yun, ... Nanoscale 9 (4), 1645-1652, 2017 | 42 | 2017 |
| Unravelling the switching mechanisms in electric field induced insulator–metal transitions in VO2 nanobeams S Rathi, JH Park, I Lee, JM Baik, KS Yi, GH Kim Journal of Physics D: Applied Physics 47 (29), 295101, 2014 | 41 | 2014 |
| Observation of negative differential resistance in mesoscopic graphene oxide devices S Rathi, I Lee, M Kang, D Lim, Y Lee, S Yamacli, HI Joh, S Kim, SW Kim, ... Scientific reports 8 (1), 7144, 2018 | 32 | 2018 |
| Low temperature hydrogen sensing using reduced graphene oxide and tin oxide nanoflowers based hybrid structure A Venkatesan, S Rathi, IY Lee, J Park, D Lim, GH Kim, ES Kannan Semiconductor Science and Technology 31 (12), 125014, 2016 | 29 | 2016 |
| Poly-4-vinylphenol and poly (melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics I Lee, HY Park, J Park, G Yoo, MH Lim, J Park, S Rathi, WS Jung, J Kim, ... Nanoscale 6 (7), 3830-3836, 2014 | 25 | 2014 |
| Molybdenum disulfide nanoparticles decorated reduced graphene oxide: Highly sensitive and selective hydrogen sensor A Venkatesan, S Rathi, I Lee, J Park, D Lim, M Kang, HI Joh, GH Kim, ... Nanotechnology 28 (36), 365501, 2017 | 24 | 2017 |
| Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2 MA Khan, S Rathi, D Lim, SJ Yun, DH Youn, K Watanabe, T Taniguchi, ... Chemistry of Materials 30 (3), 1011-1016, 2018 | 22 | 2018 |
| Postfabrication Annealing Effects on Insulator–Metal Transitions in VO2 Thin-Film Devices S Rathi, I Lee, JH Park, BJ Kim, HT Kim, GH Kim ACS applied materials & interfaces 6 (22), 19718-19725, 2014 | 22 | 2014 |
| Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs–InGaAs symmetric double-gate HEMT S Rathi, J Jogi, M Gupta, RS Gupta Microelectronics Reliability 49 (12), 1508-1514, 2009 | 21 | 2009 |
| Tunable electron and hole injection enabled by atomically thin tunneling layer for improved contact resistance and dual channel transport in MoS2/WSe2 van der Waals heterostructure MA Khan, S Rathi, C Lee, D Lim, Y Kim, SJ Yun, DH Youn, GH Kim ACS applied materials & interfaces 10 (28), 23961-23967, 2018 | 18 | 2018 |
| Photodetector based on multilayer SnSe2 field effect transistor M Kang, S Rathi, I Lee, L Li, MA Khan, D Lim, Y Lee, J Park, AT Pham, ... Journal of Nanoscience and Nanotechnology 18 (6), 4243-4247, 2018 | 15 | 2018 |
| High performance MoS2-based field-effect transistor enabled by hydrazine doping D Lim, ES Kannan, I Lee, S Rathi, L Li, Y Lee, MA Khan, M Kang, J Park, ... Nanotechnology 27 (22), 225201, 2016 | 14 | 2016 |
Inyeal LeeSamsung electronics, Foundry business, Logic Process Architecture IntegrationE-mail confirmado em skku.edu
