Giovanni Capellini

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Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinE-mail confirmado em ikz-berlin.de
evangelisti f.università di Roma TREE-mail confirmado em fis.uniroma3.it
Michele VirgilioPhysics Department, Pisa UniversityE-mail confirmado em df.unipi.it
Yuji YamamotoIHPE-mail confirmado em ihp-microelectronics.com
Gianlorenzo MasiniLuxteraE-mail confirmado em luxtera.com
Wolfgang M. KlesseIHPE-mail confirmado em ihp-microelectronics.com
Giordano ScappucciQuTech, TU DelftE-mail confirmado em tudelft.nl
Michele OrtolaniSapienza University of RomeE-mail confirmado em roma1.infn.it
Montalenti, F.Professor of Physics of Matter, Materials Science Department, University of Milano-BicoccaE-mail confirmado em unimib.it
Jeremy WitzensProfessor of Electrical Engineering, RWTH Aachen UniversityE-mail confirmado em iph.rwth-aachen.de
Nunzio MottaProfessor, Queensland University of TechnologyE-mail confirmado em qut.edu.au
Federico BoscheriniDepartment of Physics and Astronomy, University of BolognaE-mail confirmado em unibo.it
Federico RoseiCentre for Energy, Materials and Telecommunications, INRSE-mail confirmado em emt.inrs.ca
Subhajit GuhaIHPE-mail confirmado em ihp-microelectronics.com
Gang NiuXi'an Jiaotong UniversityE-mail confirmado em mail.xjtu.edu.cn
Giuseppe NicotraCNR-IMME-mail confirmado em cnr.it
Corrado SpinellaInstitute of Microelectronics and Microsystems - CNRE-mail confirmado em imm.cnr.it
Diego SabbaghQuTech - TUDelftE-mail confirmado em tudelft.nl
Tobias SchülliESRF Scientist in charge of Beamline ID01; Group Head of the X-ray Nanoprobe groupE-mail confirmado em esrf.fr
Marco SalvalaglioResearch Fellow, Technische Universität DresdenE-mail confirmado em tu-dresden.de

Giovanni Capellini

Full Professor, Experimental condensed matter Physics, Dip. di Scienze, Università Roma Tre e IHP

E-mail confirmado em uniroma3.it - Página inicial

Condensed Matter Physics Nanotechnology & Nanoscience Materials science


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Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ... Applied Physics Letters 72 (24), 3175-3177, 1998	308	1998
SiGe intermixing in Ge/Si (100) islands G Capellini, M De Seta, F Evangelisti Applied Physics Letters 78 (3), 303-305, 2001	194	2001
Methods of incorporating germanium within CMOS process LC Gunn III, G Capellini, MJ Rattier, TJ Pinguet US Patent 6,887,773, 2005	151	2005
Ge–Si intermixing in Ge quantum dots on Si (001) and Si (111) F Boscherini, G Capellini, L Di Gaspare, F Rosei, N Motta, S Mobilio Applied Physics Letters 76 (6), 682-684, 2000	148	2000
Atomic force microscopy lithography as a nanodevice development technique A Notargiacomo, V Foglietti, E Cianci, G Capellini, M Adami, P Faraci, ... Nanotechnology 10 (4), 458, 1999	140	1999
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking A Novack, M Gould, Y Yang, Z Xuan, M Streshinsky, Y Liu, G Capellini, ... Optics express 21 (23), 28387-28393, 2013	104	2013
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ... Optics Express 22 (1), 399-410, 2014	102	2014
Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti Physical review letters 75 (18), 3352, 1995	100	1995
Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition G Capellini, L Di Gaspare, F Evangelisti, E Palange Applied physics letters 70 (4), 493-495, 1997	99	1997
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ... Journal of Applied Physics 113 (1), 013513, 2013	96	2013
Germanium integrated CMOS wafer and method for manufacturing the same LC Gunn III, G Capellini, G Masini US Patent 7,262,117, 2007	94	2007
Monolithically integrated high-speed CMOS photonic transceivers T Pinguet, B Analui, E Balmater, D Guckenberger, M Harrison, ... 2008 5th IEEE international conference on group IV photonics, 362-364, 2008	91	2008
A four-channel, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetectors G Masini, G Capellini, J Witzens, C Gunn Optical Fiber Communication Conference, PDP31, 2007	88	2007
Radiative recombination and optical gain spectra in biaxially strained -type germanium M Virgilio, CL Manganelli, G Grosso, G Pizzi, G Capellini Physical review B 87 (23), 235313, 2013	78	2013
High-speed near infrared optical receivers based on Ge waveguide photodetectors integrated in a CMOS process G Masini, S Sahni, G Capellini, J Witzens, C Gunn Advances in Optical Technologies 2008, 1-5, 2008	77	2008
Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS₂ M Xia, B Li, K Yin, G Capellini, G Niu, Y Gong, W Zhou, PM Ajayan, ... ACS nano 9 (12), 12246-12254, 2015	74	2015
Ordering self-assembled islands without substrate patterning G Capellini, M De Seta, C Spinella, F Evangelisti Applied physics letters 82 (11), 1772-1774, 2003	74	2003
A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons Nano letters 11 (6), 2272-2279, 2011	66	2011
Intermixing-promoted scaling of Ge/Si (100) island sizes M De Seta, G Capellini, F Evangelisti, C Spinella Journal of applied physics 92 (1), 614-619, 2002	66	2002
Germanium silicon heterostructure photodetectors G Masini, LC Gunn III, G Capellini US Patent 7,397,101, 2008	65	2008

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