| Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ... IEEE Transactions on electron devices 60 (10), 3157-3165, 2013 | 254 | 2013 |
| Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT G Dutta, S Turuvekere, N Karumuri, N DasGupta, A DasGupta IEEE Electron Device Letters 35 (11), 1085-1087, 2014 | 61 | 2014 |
| A continuous analytical model for 2-DEG charge density in AlGaN/GaN HEMTs valid for all bias voltages N Karumuri, S Turuvekere, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 61 (7), 2343-2349, 2014 | 48 | 2014 |
| A compact model of drain current for GaN HEMTs based on 2-DEG charge linearization N Karumuri, G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (11), 4226-4232, 2016 | 29 | 2016 |
| Modeling and analysis of normally-OFF p-GaN gate AlGaN/GaN HEMT as an ON-chip capacitor A Abdulsalam, N Karumuri, G Dutta IEEE Transactions on Electron Devices 67 (9), 3536-3540, 2020 | 22 | 2020 |
| An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge N Karumuri, T Sreenidhi, N DasGupta, A DasGupta 2012 International Conference on Emerging Electronics, 1-4, 2012 | 4 | 2012 |
| Symmetric BSIM-SOI—Part I: A Compact Model for Dynamically Depleted SOI MOSFETs CK Dabhi, D Rajasekharan, G Pahwa, D Nandi, N Karumuri, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
Sreenidhi TGlobalFoundries, BengaluruE-mail confirmado em globalfoundries.com
