Hiromichi Ohta
Hiromichi Ohta
Professor of Research Institute for Electronic Science, Hokkaido University
E-mail confirmado em es.hokudai.ac.jp - Página inicial
TítuloCitado porAno
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono
nature 432 (7016), 488-492, 2004
66522004
Amorphous Oxide And Thin Film Transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 10/592,431, 2007
32972007
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya
US Patent 7,061,014, 2006
32702006
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya
US Patent 7,061,014, 2006
32702006
LnCuO (S, Se, Te) monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
H Hosono, M Hirano, H Ota, M Orita, H Hiramatsu, K Ueda
US Patent 7,323,356, 2008
31412008
LnCuO (S, Se, Te) monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
H Hosono, M Hirano, H Ota, M Orita, H Hiramatsu, K Ueda
US Patent 7,323,356, 2008
31412008
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent 10,032,930, 2018
31352018
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 12/504,158, 2009
31322009
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono
Science 300 (5623), 1269-1272, 2003
26042003
Amorphous oxide semiconductors for high-performance flexible thin-film transistors
K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono
Japanese journal of applied physics 45 (5S), 4303, 2006
13032006
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline films
K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono
Applied Physics Letters 85 (11), 1993-1995, 2004
8952004
Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3
H Ohta, SW Kim, Y Mune, T Mizoguchi, K Nomura, S Ohta, T Nomura, ...
Nature materials 6 (2), 129-134, 2007
8602007
Amorphous transparent conductive oxide InGaO3 (ZnO) m (m≤ 4): a Zn4s conductor
M Orita, H Ohta, M Hirano, S Narushima, H Hosono
Philosophical magazine B 81 (5), 501-515, 2001
7972001
Handbook of Transparent Conductors
DS Ginley
Springer Verlag, 2010
7342010
Current injection emission from a transparent< equation> p–n</equation> junction composed of< equation> p-< font face='verdana'> SrCu</font>< sub>< font face='verdana'> 2</font …
H Ohta, K Kawamura, M Orita, M Hirano, N Sarukura, H Hosono
Applied Physics Letters 77 (4), 475-477, 2000
662*2000
Deep-ultraviolet transparent conductive β-GaO thin films
M Orita, H Ohta, M Hirano, H Hosono
Applied Physics Letters 77, 4166, 2000
6362000
Deep-ultraviolet transparent conductive< equation> β-< font face='verdana'> Ga</font>< sub>< font face='verdana'> 2</font></sub>< font face='verdana'> O</font>< sub>< font face …
M Orita, H Ohta, M Hirano, H Hosono
Applied Physics Letters 77 (25), 4166-4168, 2000
636*2000
High-temperature carrier transport and thermoelectric properties of heavily La- or Nb-doped single crystals
S Ohta, T Nomura, H Ohta, K Koumoto
Journal of applied physics 97 (3), 034106, 2005
5152005
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO< sub> 4</sub>
A Takagi, K Nomura, H Ohta, H Yanagi, T Kamiya, M Hirano, H Hosono
Thin Solid Films 486 (1), 38-41, 2005
4632005
Epitaxial growth of transparent p-type conducting thin films on sapphire (001) substrates by pulsed laser deposition
K Ueda, T Hase, H Yanagi, H Kawazoe, H Hosono, H Ohta, M Orita, ...
Journal of Applied Physics 89 (3), 1790-1793, 2001
4202001
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