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Jae Young Lee
Jae Young Lee
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Common fabrication of different semiconductor devices with different threshold voltages
H Kim, K Choi, JY Lee
US Patent App. 14/134,358, 2015
3212015
Alternate state variables for emerging nanoelectronic devices
K Galatsis, A Khitun, R Ostroumov, KL Wang, WR Dichtel, E Plummer, ...
IEEE transactions on Nanotechnology 8 (1), 66-75, 2008
592008
Sub-10-9 Ω.cm2 Contact Resistivity on p-SiGe Achieved by Ga Doping and Nanosecond Laser Activation
NH J-L. Everaert, M. Schaekers, H. Yu1, L.-L. Wang, A. Hikavyy, L. Date, J ...
Symposium on VLSI Technology Digest of Technical Papers., 2017
36*2017
Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10Ω·cm2contact resistivity achieved on Ga doped Ge using nanosecond laser activation
LL Wang, H Yu, M Schaekers, JL Everaert, A Franquet, B Douhard, L Date, ...
2017 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2017
312017
Fabrication and field emission study of atomically sharp high-density tungsten nanotip arrays
K Sun, JY Lee, B Li, W Liu, C Miao, YH Xie, X Wei, TP Russell
Journal of Applied Physics 108 (3), 2010
222010
Field emission tip array fabrication utilizing geometrical hindrance in the oxidation of Si
K Sun, W Zhang, B Li, JY Lee, YH Xie, T Schroeder, J Katzer, X Wei, ...
IEEE transactions on nanotechnology 11 (5), 999-1003, 2012
152012
Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate
JY Lee, K Sun, B Li, YH Xie, X Wei, TP Russell
Applied Physics Letters 97 (9), 2010
132010
A method to fabricate a template with a long range ordered dense array of true nanometer scale pits
JY Lee, K Sun, B Li, X Wei, T Russell, YH Xie
IEEE transactions on nanotechnology 10 (2), 256-259, 2010
32010
Scalability of phase change materials in nano-structure template
SJCYHX Wei Zhang, Biyun Jackson, Ke Sun, Jae Young Lee, S.-J. Huang, Hsin ...
International Journal of Photoenergy., 2015
22015
Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates
J Kim, JY Lee, YH Xie
Thin solid films 516 (21), 7599-7603, 2008
12008
Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si
W Zhang, K Sun, B Li, JY Lee, YH Xie, J Katzer, T Schroeder, X Wei, ...
2012
10.5: Field emission properties of atomically sharp tungsten nanotip arrays fabricated by a novel nanocasting method
K Sun, JY Lee, B Li, C Miao, W Liu, YH Xie, X Wei, TP Russell
International Vacuum Nanoelectronics Conference, 205-206, 2010
2010
3-D Finite Element Simulation of a Phase-change Random Access Memory Cell with a Self-insulated Structure
K Sun, W Feng, JY Lee, B Li, YH Xie
MRS Online Proceedings Library (OPL) 1108, 1108-A11-04, 2008
2008
Replacement Gate Formation with Angled Etch and Deposition
US Patent US10403552B1, 0
Method of forming transistor device having fin cut regions
US Patent US20190273011A1, 0
Structure and method of forming device having improved isolation oxide
US Patent US20190259859A1, 0
Techniques for forming isolation structures in substrate
US Patent US 10,090,166, 0
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