Search for long-lived particles with displaced vertices in multijet events in proton-proton collisions at AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, E Asilar, T Bergauer, ...
Physical Review D 98 (9), 092011, 2018
90 2018 Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ...
Applied Physics Express 6 (1), 016501, 2012
60 2012 InAlN/GaN HEMTs on Si With High W Xing, Z Liu, H Qiu, K Ranjan, Y Gao, GI Ng, T Palacios
IEEE Electron Device Letters 39 (1), 75-78, 2017
56 2017 Search for Narrow Resonances in the AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, E Asilar, T Bergauer, ...
Physical review letters 120 (20), 201801, 2018
26 2018 High Johnson’s figure of merit (8.32 THz· V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon K Ranjan, S Arulkumaran, GI Ng, S Vicknesh
Applied Physics Express 7 (4), 044102, 2014
25 2014 Performance of the CMS muon trigger system in proton-proton collisions at CMS collaboration
arXiv preprint arXiv:2102.04790, 2021
24 2021 Observation of the Production of Three Massive Gauge Bosons at AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, T Bergauer, ...
Physical review letters 125 (15), 151802, 2020
24 2020 Search for direct pair production of supersymmetric partners to the $${\uptau} _ {}^{} $$ τ lepton in proton–proton collisions at $$\sqrt {s}= 13\,\text {TeV} $$ s= 13TeV AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, T Bergauer, ...
The European Physical Journal C 80 (3), 1-34, 2020
24 2020 Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN Y Li, GI Ng, S Arulkumaran, G Ye, ZH Liu, K Ranjan, KS Ang
Journal of Applied Physics 121 (4), 044504, 2017
24 2017 Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2 O3 dielectric gate stack MJ Anand, GI Ng, S Vicknesh, S Arulkumaran, K Ranjan
physica status solidi (c) 10 (11), 1421-1425, 2013
24 2013 Studies of charm and beauty hadron long-range correlations in pp and pPb collisions at LHC energies AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, T Bergauer, ...
Physics Letters B 813, 136036, 2021
23 2021 Search for new physics in top quark production in dilepton final states in proton-proton collisions at AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, E Asilar, T Bergauer, ...
The European Physical Journal C 79 (11), 1-29, 2019
23 2019 Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si S Arulkumaran, K Ranjan, GI Ng, J Kennedy, PP Murmu, TN Bhat, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2016
23 2016 Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) MJ Anand, GI Ng, S Arulkumaran, CM Manoj Kumar, K Ranjan, ...
Applied Physics Letters 106 (8), 083508, 2015
23 2015 Measurement of CKM matrix elements in single top quark t-channel production in proton-proton collisions at s= 13 TeV AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, T Bergauer, ...
Physics Letters B 808, 135609, 2020
22 2020 Measurement of the CMS collaboration
arXiv preprint arXiv:2007.02434, 2020
22 * 2020 Search for resonances in the mass spectrum of muon pairs produced in association with b quark jets in proton-proton collisions at s = 8 AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, E Asilar, T Bergauer, ...
Journal of High Energy Physics 2018 (11), 1-37, 2018
22 2018 Search for new neutral Higgs bosons through the H → ZA → ℓ + ℓ − b b ¯ AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, T Bergauer, ...
Journal of High Energy Physics 2020 (3), 1-40, 2020
21 2020 Planar Nanostrip-Channel Al2 O3 /InAlN/GaN MISHEMTs on Si With Improved Linearity W Xing, Z Liu, K Ranjan, GI Ng, T Palacios
IEEE Electron Device Letters 39 (7), 947-950, 2018
21 2018 Measurement of associated Z + charm production in proton–proton collisions at AM Sirunyan, A Tumasyan, W Adam, F Ambrogi, E Asilar, T Bergauer, ...
The European Physical Journal C 78 (4), 1-34, 2018
21 2018 
Geok Ing NgNanyang Technological UniversityE-mail confirmado em ntu.edu.sg
