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Ravikiran Lingaparthi
Ravikiran Lingaparthi
E-mail confirmado em e.ntu.edu.sg
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GaN schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
IEEE Sensors Journal 17 (1), 72-77, 2016
292016
Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxy
L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ...
Journal of Applied Physics 117 (2), 025301, 2015
222015
Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxy
N Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ...
Applied Physics Express 5 (9), 091003, 2012
222012
Surface related tunneling leakage in β-Ga 2 O 3 (001) vertical Schottky barrier diodes
R Lingaparthi, K Sasaki, QT Thieu, A Takatsuka, F Otsuka, S Yamakoshi, ...
Applied Physics Express, 2019
162019
Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran
Thin Solid Films 520 (24), 7109-7114, 2012
152012
Surface states on (001) oriented β-Ga2O3 epilayers, their origin, and their effect on the electrical properties of Schottky barrier diodes
R Lingaparthi, QT Thieu, K Koshi, D Wakimoto, K Sasaki, A Kuramata
Applied Physics Letters 116 (9), 092101, 2020
122020
Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si (111)
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
Semiconductor Science and Technology 31 (9), 095003, 2016
112016
Effects of oxygen annealing of β-Ga2O3 epilayers on the properties of vertical Schottky barrier diodes
R Lingaparthi, QT Thieu, K Sasaki, A Takatsuka, F Otsuka, S Yamakoshi, ...
ECS Journal of Solid State Science and Technology 9 (2), 024004, 2020
92020
Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si (111)
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, ...
Journal of Applied Physics 114 (12), 123503, 2013
92013
Effect of stress mitigating layers on the structural properties of GaN grown by ammonia molecular beam epitaxy on 100 mm Si (111)
L Ravikiran, M Agrawal, N Dharmarasu, K Radhakrishnan
Japanese Journal of Applied Physics 52 (8S), 08JE05, 2013
72013
Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy
M Agrawal, L Ravikiran, N Dharmarasu, K Radhakrishnan, ...
AIP Advances 7 (1), 015022, 2017
62017
Non-linear thermal resistance model for the simulation of high power GaN-based devices
S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ...
Semiconductor Science and Technology 36 (5), 055002, 2021
52021
In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron …
R Lingaparthi, N Dharmarasu, K Radhakrishnan, M Agrawal
Thin Solid Films 708, 138128, 2020
52020
Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si (111)
L Ravikiran, K Radhakrishnan, S Munawar Basha, N Dharmarasu, ...
Journal of Applied Physics 117 (24), 245305, 2015
52015
Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (1 1 1) by ammonia molecular beam epitaxy
M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran
Journal of crystal growth 378, 283-286, 2013
42013
Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy
R Lingaparthi
PhD Thesis, Nanynag Technological University, 2014
32014
Enhanced NO2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors
A Ranjan, R Lingaparthi, N Dharmarasu, K Radhakrishnan
Journal of The Electrochemical Society 168 (4), 047502, 2021
12021
Characterization of highly-doped GaN as a new material for plasmonic applications
L Wetterau, L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, ...
2016 International Conference on Optical MEMS and Nanophotonics (OMN), 1-2, 2016
12016
Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy
R Lingaparthi, N Dharmarasu, K Radhakrishnan, Y Zheng
Journal of Physics D: Applied Physics 55 (9), 095110, 2021
2021
Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
R Lingaparthi, N Dharmarasu, K Radhakrishnan, A Ranjan, TLA Seah, ...
Applied Physics Letters 118 (12), 122105, 2021
2021
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