| Raman and X‐ray photoelectron spectroscopy investigation of the effect of gamma‐ray irradiation on MoS2 B Ozden, MP Khanal, J Park, S Uprety, V Mirkhani, K Yapabandara, K Kim, ... Micro & Nano Letters 12 (4), 271-274, 2017 | 23 | 2017 |
| Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low‐voltage operation J Jiang, MA Kuroda, AC Ahyi, T Isaacs‐Smith, V Mirkhani, M Park, S Dhar physica status solidi (a) 212 (10), 2219-2225, 2015 | 22 | 2015 |
| Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) MP Khanal, S Uprety, V Mirkhani, S Wang, K Yapabandara, E Hassani, ... Journal of Applied Physics 124 (21), 2018 | 20 | 2018 |
| Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors MP Khanal, B Ozden, K Kim, S Uprety, V Mirkhani, K Yapabandara, ... Journal of Vacuum Science & Technology B 35 (3), 2017 | 19 | 2017 |
| On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO V Mirkhani, K Yapabandara, S Wang, MP Khanal, S Uprety, MS Sultan, ... Thin Solid Films 672, 152-156, 2019 | 16 | 2019 |
| Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si B Ozden, C Yang, F Tong, MP Khanal, V Mirkhani, MH Sk, AC Ahyi, ... Applied Physics Letters 105 (17), 2014 | 9 | 2014 |
| Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location K Yapabandara, V Mirkhani, S Wang, MP Khanal, S Uprety, ... Microelectronics Reliability 91, 262-268, 2018 | 8 | 2018 |
| Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures S Wang, V Mirkhani, K Yapabandara, R Cheng, G Hernandez, MP Khanal, ... Journal of Applied Physics 123 (16), 2018 | 8 | 2018 |
| Analysis of point defect distributions in AlGaN/GaN heterostructures via spectroscopic photo current-voltage measurements B Ozden, MP Khanal, S Youn, V Mirkhani, K Yapabandara, M Park, ... ECS Journal of Solid State Science and Technology 5 (4), P3206, 2016 | 8 | 2016 |
| High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors V Mirkhani, S Wang, K Yapabandara, MS Sultan, MP Khanal, S Uprety, ... Semiconductor Science and Technology 36 (10), 105011, 2021 | 7 | 2021 |
| Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers K Yapabandara, V Mirkhani, MS Sultan, B Ozden, MP Khanal, M Park, ... Journal of Vacuum Science & Technology B 35 (3), 2017 | 6 | 2017 |
| The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors S Wang, S Uprety, V Mirkhani, D Hanggi, K Yapabandara, MP Khanal, ... Solid-State Electronics 191, 108270, 2022 | 4 | 2022 |
| Control of light scattering with nanoparticles and/or coatings HF Greer, RM Briggs, S Sihan, SS Harried, T Lee, R Lobaton, V Mirkhani US Patent App. 16/516,925, 2020 | 4 | 2020 |
| Time-resolved photocurrent spectroscopic diagnostics of electrically active defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on Si wafers B Ozden, MP Khanal, V Mirkhani, K Yapabandara, C Yang, S Ko, S Youn, ... Journal of Nanoscience and Nanotechnology 16 (7), 7630-7634, 2016 | 4 | 2016 |
| Analysis of the effect of gamma-ray irradiation and low-temperature characteristics of sol-gel derived ZnO thin-film transistors S Wang, V Mirkhani, K Yapabandara, S Ko, MH Sk, M Park, MC Hamilton 2015 73rd Annual Device Research Conference (DRC), 171-172, 2015 | 4 | 2015 |
| Simulation of the refractive index of Ga doped ZnO nanoparticles embedded in PEDOT: PSS using effective medium approximations V Mirkhani, F Tong, D Song, Y Chung, B Ozden, K Yapabandara, ... Journal of Nanoscience and Nanotechnology 16 (7), 7358-7362, 2016 | 3 | 2016 |
| Enhancement of electrical characteristics of a‐ZTO TFTs based on channel layers produced with alternating precursor concentration S Uprety, D Hanggi, K Yapabandara, V Mirkhani, MP Khanal, B Schoenek, ... Electronics Letters 54 (22), 1298-1300, 2018 | 2 | 2018 |
| Design and Optimization of Smart Central Heating Units for Homes; Energy and Environment Nexus A Fazeli, AR Pardakhti, MA Zahed, V Mirkhani Environmental Energy and Economic Research 5 (3), 1-10, 2021 | 1 | 2021 |
| Gamma-Ray Irradiation Effect on Sol-Gel Derived Zinc Tin Oxide Thin Film Transistors S Wang, S Uprety, V Mirkhani, D Hanggi, K Yapabandara, M Khanal, ... APS March Meeting Abstracts 2018, T60. 120, 2018 | 1 | 2018 |
| Enhancement of the electrical characteristics of thin-film transistors with multi-stack zinc tin oxide channel layers produced with 2 different solution concentrations S Uprety, S Wang, D Hanggi, K Yapabandara, V Mirkhani, M Khanal, ... APS March Meeting Abstracts 2018, T60. 047, 2018 | 1 | 2018 |
Min P KhanalAuburn UniversityE-mail confirmado em auburn.edu
