Jing Zhang
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Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu
Optics express 19 (104), A991-A1007, 2011
5662011
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
J Zhang, H Zhao, N Tansu
Applied Physics Letters 97 (11), 111105-111105-3, 2010
1822010
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
J Zhang, N Tansu
Journal of Applied Physics 110 (11), 113110-113110-5, 2011
1772011
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes
H Zhao, G Liu, J Zhang, RA Arif, N Tansu
Journal of Display Technology 9 (4), 212-225, 2013
1762013
III-nitride photonics
N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee
Photonics Journal, IEEE 2 (2), 241-248, 2010
1642010
Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum wells light-emitting diodes
G Liu, J Zhang, CK Tan, N Tansu
IEEE Photonics Journal 5 (2), 2201011, 2013
1592013
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes
J Zhang, H Zhao, N Tansu
Applied Physics Letters 98 (17), 171111-171111-3, 2011
1482011
Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates
J Zhang, N Tansu
IEEE Photonics Journal 5 (2), 2600111, 2013
1122013
Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates
J Zhang, N Tansu
112*
Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
H Zhao, J Zhang, G Liu, N Tansu
Applied Physics Letters 98 (15), 151115-151115-3, 2011
1102011
FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays
P Zhu, G Liu, J Zhang, N Tansu
Journal of Display Technology 9 (5), 317-323, 2013
1032013
First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters
CK Tan, J Zhang, XH Li, G Liu, BO Tayo, N Tansu
Journal of Display Technology 9 (4), 272-279, 2013
942013
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed TiO Microsphere Arrays
XH Li, P Zhu, G Liu, J Zhang, R Song, YK Ee, P Kumnorkaew, JF Gilchrist, ...
Journal of Display Technology 9 (5), 324-332, 2013
852013
Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
H Tong, J Zhang, G Liu, JA Herbsommer, GS Huang, N Tansu
Applied Physics Letters 97 (11), 112105-112105-3, 2010
762010
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
G Liu, H Zhao, J Zhang, JH Park, LJ Mawst, N Tansu
Nanoscale research letters 6 (1), 1-10, 2011
732011
Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents
J Zhang, H Tong, G Liu, JA Herbsommer, GS Huang, N Tansu
Journal of Applied Physics 109 (5), 053706-053706-6, 2011
712011
Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates
G Liu, J Zhang, XH Li, GS Huang, T Paskova, KR Evans, H Zhao, N Tansu
Journal of Crystal Growth 340 (1), 66-73, 2012
552012
Investigation of fast and slow decays in InGaN/GaN quantum wells
G Sun, G Xu, YJ Ding, H Zhao, G Liu, J Zhang, N Tansu
Applied Physics Letters 99 (8), 081104-081104-3, 2011
542011
234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes
C Liu, YK Ooi, SM Islam, HG Xing, D Jena, J Zhang
Applied Physics Letters 112, 011101, 2018
472018
High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy
J Zhang, S Kutlu, G Liu, N Tansu
Journal of Applied Physics 110 (4), 043710-043710-6, 2011
462011
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