Sergio I. Molina
Sergio I. Molina
Full Professor
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Citado por
Growth of III-nitrides on Si (1 1 1) by molecular beam epitaxy Doping, optical, and electrical properties
E Calleja, MA Sánchez-Garcı́a, FJ Sanchez, F Calle, FB Naranjo, ...
Journal of crystal growth 201, 296-317, 1999
The Peak Pairs algorithm for strain mapping from HRTEM images
PL Galindo, S Kret, AM Sanchez, JY Laval, A Yanez, J Pizarro, E Guerrero, ...
Ultramicroscopy 107 (12), 1186-1193, 2007
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
E Antolín, A Martí, CD Farmer, PG Linares, E Hernández, AM Sánchez, ...
Journal of Applied Physics 108 (6), 064513, 2010
Point defect configurations of supersaturated Au atoms inside Si nanowires
SH Oh, K Benthem, SI Molina, AY Borisevich, W Luo, P Werner, ...
Nano letters 8 (4), 1016-1019, 2008
Room temperature emission at from InGaAs quantum dots capped with GaAsSb
JM Ripalda, D Granados, Y González, AM Sánchez, SI Molina, JM García
Applied Physics Letters 87 (20), 202108, 2005
Vertical order in stacked layers of self-assembled In (Ga) As quantum rings on GaAs (001)
D Granados, JM García, T Ben, SI Molina
Applied Physics Letters 86 (7), 071918, 2005
Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems
SJ Pennycook, MF Chisholm, AR Lupini, M Varela, AY Borisevich, ...
Philosophical Transactions of the Royal Society A: Mathematical, Physical …, 2009
Aqueous Near‐Infrared Fluorescent Composites Based on Apoferritin‐Encapsulated PbS Quantum Dots
B Hennequin, L Turyanska, T Ben, AM Beltran, SI Molina, M Li, S Mann, ...
Advanced Materials 20 (19), 3592-3596, 2008
Design of InGaAs linear graded buffer structures
A Sacedon, F González‐Sanz, E Calleja, E Munoz, SI Molina, FJ Pacheco, ...
Applied physics letters 66 (24), 3334-3336, 1995
Column-by-column compositional mapping by Z-contrast imaging
SI Molina, DL Sales, PL Galindo, D Fuster, Y Gonzalez, B Alén, ...
Ultramicroscopy 109 (2), 172-176, 2009
Molecular beam epitaxy of GaBiAs on GaAs substrates
M Henini, J Ibanez, M Schmidbauer, M Shafi, SV Novikov, L Turyanska, ...
Applied Physics Letters 91 (25), 251909, 2007
The effect of Si doping on the defect structure of GaN/AlN/Si (111)
SI Molina, AM Sanchez, FJ Pacheco, R Garcıa, MA Sánchez-Garcıa, ...
Applied physics letters 74 (22), 3362-3364, 1999
Novel method of preparation of gold‐nanoparticle‐doped TiO2 and SiO2 plasmonic thin films: optical characterization and comparison with Maxwell–Garnett modeling
E Pedrueza, JL Valdés, V Chirvony, R Abargues, J Hernández‐Saz, ...
Advanced Functional Materials 21 (18), 3502-3507, 2011
Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
R Kudrawiec, M Syperek, P Poloczek, J Misiewicz, RH Mari, M Shafi, ...
Journal of Applied Physics 106 (2), 023518, 2009
Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells
D Alonso-Álvarez, AG Taboada, JM Ripalda, B Alén, Y González, ...
Applied Physics Letters 93 (12), 123114, 2008
Size control of quantum wires by tailoring exchange
D Fuster, MU González, L González, Y González, T Ben, A Ponce, ...
Applied physics letters 85 (8), 1424-1426, 2004
Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures
J Pizarro, PL Galindo, E Guerrero, A Yáñez, MP Guerrero, A Rosenauer, ...
Applied Physics Letters 93 (15), 153107, 2008
Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging
A Garcia, AM Raya, MM Mariscal, R Esparza, M Herrera, SI Molina, ...
Ultramicroscopy 146, 33-38, 2014
Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation‐free (<105 cm−2) and unstrained epilayers
SI Molina, FJ Pacheco, D Araujo, R Garcia, A Sacedon, E Calleja, Z Yang, ...
Applied physics letters 65 (19), 2460-2462, 1994
Distribution of bismuth atoms in epitaxial GaAsBi
DL Sales, E Guerrero, JF Rodrigo, PL Galindo, A Yáñez, M Shafi, ...
Applied Physics Letters 98 (10), 101902, 2011
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