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Marcelo N.P. Carreņo
Marcelo N.P. Carreņo
Verified email at lme.usp.br
Title
Cited by
Cited by
Year
Thick SiOxNy and SiO2 films obtained by PECVD technique at low temperatures
MI Alayo, I Pereyra, MNP Carreno
Thin Solid Films 332 (1-2), 40-45, 1998
1201998
Wide gap a-Si1− xCx: H thin films obtained under starving plasma deposition conditions
I Pereyra, MNP Carreņo
Journal of non-crystalline solids 201 (1-2), 110-118, 1996
771996
Wide optical band gap window layers for solar cells
Z Yu, I Pereyra, MNP Carreno
Solar energy materials and solar cells 66 (1-4), 155-162, 2001
662001
Microvoids in diamond‐like amorphous silicon carbide
MNP Carreno, I Pereyra, MCA Fantini, H Takahashi, R Landers
Journal of applied physics 75 (1), 538-542, 1994
621994
The influence of “starving plasma” regime on carbon content and bonds in a-Si1− xCx: H thin films
I Pereyra, MNP Carreno, MH Tabacniks, RJ Prado, MCA Fantini
Journal of applied physics 84 (5), 2371-2379, 1998
611998
On the structural properties of a‐Si1−xCx:H thin films
V Mastelaro, AM Flank, MCA Fantini, DRS Bittencourt, MNP Carreņo, ...
Journal of applied physics 79 (3), 1324-1329, 1996
591996
Low temperature plasma enhanced chemical vapour deposition boron nitride
MNP Carreno, JP Bottecchia, I Pereyra
Thin Solid Films 308, 219-222, 1997
571997
Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD
AR Oliveira, MNP Carreņo
Journal of Non-Crystalline Solids 352 (9-20), 1392-1397, 2006
492006
PECVD-SiOxNy films for large area self-sustained grids applications
MNP Carreno, MI Alayo, I Pereyra, AT Lopes
Sensors and Actuators A: Physical 100 (2-3), 295-300, 2002
432002
Mechanical properties of boron nitride thin films obtained by RF-PECVD at low temperatures
J Vilcarromero, MNP Carreņo, I Pereyra
Thin Solid Films 373 (1-2), 273-276, 2000
362000
Self-sustained bridges of a-SiC: H films obtained by PECVD at low temperatures for MEMS applications
MNP Carreņo, AT Lopes
Journal of Non-Crystalline Solids 338, 490-495, 2004
332004
Fabrication of PECVD-silicon oxynitride-based optical waveguides
MI Alayo, D Criado, MNP Carreņo, I Pereyra
Materials Science and Engineering: B 112 (2-3), 154-159, 2004
312004
N and p-type doping of PECVD a-SiC: H obtained under “silane starving plasma” condition with and without hydrogen dilution
AR Oliveira, MNP Carreņo
Materials Science and Engineering: B 128 (1-3), 44-49, 2006
262006
Directional random laser source consisting of a HC-ARROW reservoir connected to channels for spectroscopic analysis in microfluidic devices
KC Jorge, MA Alvarado, EG Melo, MNP Carreņo, MI Alayo, NU Wetter
Applied Optics 55 (20), 5393-5398, 2016
232016
Membranes of SiOxNy with 3D topography formed by PECVD for MEMS applications
AT Lopes, MNP Carreņo
Journal of non-crystalline solids 338, 788-792, 2004
232004
Evidence of quantum size effects in a-Si: H/a-SiCx: H superlattices. Observation of negative resistance in double barrier structures
I Pereyra, MNP Carreno, RK Onmori, CA Sassaki, AM Andrade, F Alvarez
Journal of Non-Crystalline Solids 97, 871-874, 1987
221987
Thermally actuated a-SiC: H MEMS fabricated by a PECVD process
G Rehder, MNP Carreņo
Journal of non-crystalline solids 352 (9-20), 1822-1828, 2006
192006
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD
I Pereyra, CA Villacorta, MNP Carreņo, RJ Prado, MCA Fantini
Brazilian Journal of Physics 30, 533-540, 2000
192000
Ultrasensitive microfluidic electrochemical immunosensor based on electrodeposited nanoporous gold for SOX-2 determination
M Regiart, AM Gimenez, AT Lopes, MNP Carreno, M Bertotti
Analytica Chimica Acta 1127, 122-130, 2020
172020
p-Type doping in a-Si1− xCx: H obtained by PECVD
MNP Carreņo, I Pereyra
Journal of non-crystalline solids 266, 699-703, 2000
162000
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