Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes KF Li, DS Ong, JPR David, GJ Rees, RC Tozer, PN Robson, R Grey IEEE Transactions on Electron Devices 45 (10), 2102-2107, 1998 | 161 | 1998 |

A simple model to determine multiplication and noise in avalanche photodiodes DS Ong, KF Li, GJ Rees, JPR David, PN Robson Journal of applied physics 83 (6), 3426-3428, 1998 | 115 | 1998 |

A Monte Carlo investigation of multiplication noise in thin p/sup+/-in/sup+/GaAs avalanche photodiodes DS Ong, KF Li, GJ Rees, GM Dunn, JPR David, PN Robson IEEE Transactions on Electron Devices 45 (8), 1804-1810, 1998 | 102 | 1998 |

A simple model for avalanche multiplication including deadspace effects SA Plimmer, JPR David, DS Ong, KF Li IEEE Transactions on Electron Devices 46 (4), 769-775, 1999 | 75 | 1999 |

Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ... IEEE Transactions on Electron Devices 49 (4), 544-549, 2002 | 58 | 2002 |

Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs diodes DS Ong, KF Li, SA Plimmer, GJ Rees, JPR David, PN Robson Journal of Applied Physics 87 (11), 7885-7891, 2000 | 55 | 2000 |

First-principles studies on the superconductivity of aluminene KH Yeoh, TL Yoon, DS Ong, TL Lim Applied Surface Science 445, 161-166, 2018 | 38 | 2018 |

Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations S Vainshtein, V Yuferev, V Palankovski, DS Ong, J Kostamovaara Applied Physics Letters 92 (6), 2008 | 34 | 2008 |

The merits and limitations of local impact ionization theory [APDs] SA Plimmer, JPR David, DS Ong IEEE Transactions on Electron Devices 47 (5), 1080-1088, 2000 | 32 | 2000 |

First-principles study of monolayer Be2C as an anode material for lithium-ion batteries KH Yeoh, KH Chew, YZ Chu, TL Yoon, R Rusi, DS Ong Journal of Applied Physics 126 (12), 2019 | 30 | 2019 |

Low excess noise characteristics in thin avalanche region GaAs diodes KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, PN Robson, R Grey Electronics Letters 34 (1), 125-126, 1998 | 28 | 1998 |

Modeling anomalous charge carrier transport in disordered organic semiconductors using the fractional drift-diffusion equation KY Choo, SV Muniandy, KL Woon, MT Gan, DS Ong Organic Electronics 41, 157-165, 2017 | 26 | 2017 |

Avalanche speed in thin avalanche photodiodes DS Ong, GJ Rees, JPR David Journal of applied physics 93 (7), 4232-4239, 2003 | 26 | 2003 |

Analytical band Monte Carlo simulation of electron impact ionization in In0. 53Ga0. 47As KY Choo, DS Ong Journal of applied physics 96 (10), 5649-5653, 2004 | 25 | 2004 |

Resonant tunneling and quantum cascading for optimum room-temperature generation of THz signals VP Sirkeli, O Yilmazoglu, DS Ong, S Preu, F Küppers, HL Hartnagel IEEE Transactions on Electron Devices 64 (8), 3482-3488, 2017 | 23 | 2017 |

Noise and reliability measurement of a three-axis micro-accelerometer F Mohd-Yasin, N Zaiyadi, DJ Nagel, DS Ong, CE Korman, AR Faidz Microelectronic engineering 86 (4-6), 991-995, 2009 | 22 | 2009 |

Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes SL Tan, DS Ong, HK Yow Journal of Applied Physics 102 (4), 2007 | 22 | 2007 |

Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs] KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, SA Plimmer, KY Chang, ... IEEE transactions on electron devices 47 (5), 910-914, 2000 | 22 | 2000 |

Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects KH Yeoh, KH Chew, TL Yoon, R Rusi, DS Ong Journal of Applied Physics 127 (1), 2020 | 21 | 2020 |

Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes C Groves, JPR David, GJ Rees, DS Ong Journal of applied physics 95 (11), 6245-6251, 2004 | 20 | 2004 |