Development of InGaN-based red LED grown on (0001) polar surface JI Hwang, R Hashimoto, S Saito, S Nunoue
Applied Physics Express 7 (7), 071003, 2014
290 2014 InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range S Saito, R Hashimoto, J Hwang, S Nunoue
Applied Physics Express 6 (11), 111004, 2013
213 2013 High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor JI Hwang, Y Ishida, M Kobayashi, H Hirata, K Takubo, T Mizokawa, ...
Physical Review B 72 (8), 085216, 2005
88 2005 High‐efficiency green‐yellow light‐emitting diodes grown on sapphire (0001) substrates R Hashimoto, J Hwang, S Saito, S Nunoue
physica status solidi (c) 10 (11), 1529-1532, 2013
60 2013 Semiconductor light emitting element H Katsuno, S Saito, R Hashimoto, J Hwang, S Nunoue
US Patent 9,076,929, 2015
55 2015 High-energy spectroscopy study of the ferromagnetic diluted magnetic semiconductor Zn1-xVxO Y Ishida, JI Hwang, M Kobayashi, A Fujimori, H Saeki, H Tabata, T Kawai
Physica B: Condensed Matter 351 (3-4), 304-306, 2004
40 2004 Semiconductor light emitting element and method for manufacturing the same R Hashimoto, S Kimura, J Hwang, H Katsuno, S Saito, S Nunoue
US Patent 9,337,400, 2016
36 2016 In situ Photoemission Study of the Room Temperature Ferromagnet Y Ishida, DD Sarma, K Okazaki, J Okabayashi, JI Hwang, H Ott, A Fujimori, ...
Physical review letters 91 (10), 107202, 2003
36 2003 High‐efficiency yellow light‐emitting diodes grown on sapphire (0001) substrates R Hashimoto, J Hwang, S Saito, S Nunoue
physica status solidi (c) 11 (3‐4), 628-631, 2014
32 2014 Semiconductor light emitting device H Katsuno, S Saito, R Hashimoto, J Hwang, S Nunoue
US Patent App. 14/815,083, 2015
31 2015 Semiconductor light emitting device H Katsuno, S Saito, R Hashimoto, J Hwang, S Nunoue
US Patent 9,136,253, 2015
30 2015 Semiconductor light emitting element and method for manufacturing the same R Hashimoto, S Kimura, J Hwang, H Katsuno, S Saito, S Nunoue
US Patent 9,202,994, 2015
29 2015 Soft x-ray magnetic circular dichroism study of weakly ferromagnetic Zn1− xVxO thin film Y Ishida, JI Hwang, M Kobayashi, Y Takeda, K Mamiya, J Okamoto, ...
Applied physics letters 90 (2), 2007
28 2007 Antiferromagnetic interaction between paramagnetic Co ions in the diluted magnetic semiconductor M Kobayashi, Y Ishida, JI Hwang, Y Osafune, A Fujimori, Y Takeda, ...
Physical Review B 81 (7), 075204, 2010
22 2010 Local electronic structure of Cr in the II–VI diluted ferromagnetic semiconductor Zn1-xCrxTe M Kobayashi, Y Ishida, JI Hwang, GS Song, A Fujimori, CS Yang, L Lee, ...
New Journal of Physics 10 (5), 055011, 2008
22 2008 X-ray magnetic circular dichroism characterization of GaN∕ Ga1− xMnxN digital ferromagnetic heterostructure JI Hwang, M Kobayashi, GS Song, A Fujimori, A Tanaka, ZS Yang, HJ Lin, ...
Applied Physics Letters 91 (7), 2007
21 2007 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer T Shioda, H Hung, J Hwang, H Yoshida, N Sugiyama, S Nunoue
US Patent 8,785,943, 2014
19 2014 Semiconductor light-emitting device Y Hattori, S Saito, S Nunoue, E Muramoto, K Tachibana, S Abe, J Hwang, ...
US Patent 7,915,630, 2011
16 2011 Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion JI Hwang, Y Osafune, M Kobayashi, K Ebata, Y Ooki, Y Ishida, A Fujimori, ...
Journal of applied physics 101 (10), 2007
16 2007 High-power 2.8 W blue-violet laser diode for white light sources R Hashimoto, H Hung, J Hwang, S Saito, S Nunoue
Optical review 19, 412-414, 2012
14 2012 
