Mohamed Boucherit
Mohamed Boucherit
Teledyne Dalsa Semiconductor
E-mail confirmado em teledyne.com - Página inicial
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Quantum interference channeling at graphene edges
H Yang, AJ Mayne, M Boucherit, G Comtet, G Dujardin, Y Kuk
Nano letters 10 (3), 943-947, 2010
1242010
Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures
M Boucherit, O Shoron, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ...
Applied Physics Letters 104 (18), 182904, 2014
522014
Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
M Boucherit, A Soltani, E Monroy, M Rousseau, D Deresmes, M Berthe, ...
Applied Physics Letters 99 (18), 182109, 2011
452011
Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors
M Boucherit, OF Shoron, TA Cain, CA Jackson, S Stemmer, S Rajan
Applied Physics Letters 102 (24), 242909, 2013
442013
Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors
V Ravindran, M Boucherit, A Soltani, S Gautier, T Moudakir, J Dickerson, ...
Applied Physics Letters 100 (24), 243503, 2012
302012
Electronic transport of titanate heterostructures and their potential as channels on (001) Si
L Kornblum, EN Jin, O Shoron, M Boucherit, S Rajan, CH Ahn, FJ Walker
Journal of Applied Physics 118 (10), 105301, 2015
122015
Effect of heterostructure design on current-voltage characteristics in AlxGa1−xN/GaN double-barriers resonant tunneling diode
M Boucherit, A Soltani, M Rousseau, JL Farvacque, JC DeJaeger
Journal of Applied Physics 112 (11), 114305, 2012
52012
Modulation of over 1014cm−2electrons at the SrTiO3/GdTiO3 heterojunction
O Shoron, M Boucherit, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ...
72nd Device Research Conference, 13-14, 2014
32014
SrTiO3/GdTiO3heterostructure field effect transistors
OF Shoron, M Boucherit, CA Jackson, P Moetakef, S Stemmer, S Rajan
71st Device Research Conference, 205-206, 2013
22013
Growth of GaN based structures on focused ion beam patterned templates
Y Cordier, O Tottereau, L Nguyen, M Ramdani, A Soltani, M Boucherit, ...
physica status solidi c 8 (5), 1516-1519, 2011
22011
Spectral analysis of the topography parameters for isotropic Gaussian rough surfaces applied to gold coating
M Najah, F Maaboudallah, M Boucherit, M Ferguson, L Fréchette, ...
Tribology International 165, 107339, 2022
2022
Light blocking microshutter
JM Mohamed Boucherit
CA Patent WO2016049759 A1, 2016
2016
Titanate Heterostructures on Silicon for High Power Applications
FJW Lior Kornblum, Eric N. Jin, Omor Shoron, Mohamed Boucherit, Siddharth ...
Materials Research Society, 17, 2014
2014
Etude et réalisation de dispositifs hyperfréquences sur matériaux grand gap: diode à effet tunnel résonant AlxGa1-xN/GaN, transistor HEMT boré à base de nitrure de gallium
M Boucherit
Lille 1, 2012
2012
Quantum Interference Channeling At Graphene Edges
YK Heejun Yang, Andrew J. Mayne, Mohamed Boucherit, Geneviève Comtet, Gérald ...
First Euro-Mediterranean Conference on Materials an d Renewable Energies …, 2011
2011
Investigation of the negative differential resistance reproducibility in AlN/GaN double barrier resonant tunneling diodes in DC operation
JCDJ M Boucherit, A Soltani, E Monroy, M Berthe
9th International Conference on Nitride Semiconductors, ICNS 9, 2011
2011
Optimization of AlN/GaN double-barrier resonant-tunnelling diode based on the non-equilibrium Green's function formalism
M Boucherit, A Soltani, M Rousseau, JL FARVAQUE, JC De Jaeger
9th International Conference on Nitride Semiconductors, ICNS-9, 2011
2011
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Artigos 1–17