Brenda VanMil
Brenda VanMil
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Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates
JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ...
IEEE Electron Device Letters 30 (6), 650-652, 2009
4392009
Hall effect mobility of epitaxial graphene grown on silicon carbide
JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ...
Applied Physics Letters 95 (12), 122102, 2009
2142009
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ...
Nano letters 9 (8), 2873-2876, 2009
1982009
Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm
JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ...
IEEE Electron Device Letters 31 (4), 260-262, 2010
1672010
Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production
GG Jernigan, BL VanMil, JL Tedesco, JG Tischler, ER Glaser, ...
Nano letters 9 (7), 2605-2609, 2009
1542009
Basal plane dislocation reduction in epitaxy by growth interruptions
RE Stahlbush, BL VanMil, RL Myers-Ward, KK Lew, DK Gaskill, ...
Applied Physics Letters 94 (4), 041916, 2009
772009
Turning of basal plane dislocations during epitaxial growth on 4 off-axis 4H-SiC
RL Myers-Ward, BL VanMil, RE Stahlbush, SL Katz, JM McCrate, SA Kitt, ...
Materials Science Forum 615, 105-108, 2009
702009
Recombination processes controlling the carrier lifetime in epilayers with low concentrations
PB Klein, R Myers-Ward, KK Lew, BL VanMil, CR Eddy Jr, DK Gaskill, ...
Journal of Applied Physics 108 (3), 033713, 2010
582010
Epitaxial graphene growth on SiC wafers
DK Gaskill, G Jernigan, P Campbell, JL Tedesco, J Culbertson, B VanMil, ...
ECS Transactions 19 (5), 117, 2009
522009
Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions
BL VanMil, RE Stahlbush, RL Myers-Ward, KK Lew, CR Eddy Jr, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
482008
Graphene formation on SiC substrates
BL VanMil, RL Myers-Ward, JL Tedesco, CR Eddy, GG Jernigan, ...
Materials science forum 615, 211-214, 2009
382009
4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm
J Hu, X Xin, X Li, JH Zhao, BL VanMil, KK Lew, RL Myers-Ward, CR Eddy, ...
IEEE transactions on electron devices 55 (8), 1977-1983, 2008
342008
Improvement of morphology and free carrier mobility through argon-assisted growth of epitaxial graphene on silicon carbide
JL Tedesco, B VanMil, RL Myers-Ward, J Culbertson, G Jernigan, ...
ECS Transactions 19 (5), 137, 2009
322009
High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure
BL VanMil, H Guo, LJ Holbert, K Lee, TH Myers, T Liu, D Korakakis
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
322004
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8
BL VanMil, KK Lew, RL Myers-Ward, RT Holm, DK Gaskill, CR Eddy Jr, ...
Journal of crystal growth 311 (2), 238-243, 2009
302009
Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers
SI Maximenko, JA Freitas Jr, RL Myers-Ward, KK Lew, BL VanMil, ...
Journal of applied physics 108 (1), 013708, 2010
282010
Heavy Cr doping of ZnSe by molecular beam epitaxy
BL Vanmil, AJ Ptak, L Bai, L Wang, M Chirila, NC Giles, TH Myers, ...
Journal of electronic materials 31 (7), 770-775, 2002
282002
Nanocrystalline diamond films as UV-semitransparent Schottky contacts to
MJ Tadjer, KD Hobart, JD Caldwell, JE Butler, KX Liu, CR Eddy Jr, ...
Applied Physics Letters 91 (16), 163508, 2007
262007
Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition
A Jain, X Weng, S Raghavan, BL VanMil, T Myers, JM Redwing
Journal of Applied Physics 104 (5), 053112, 2008
242008
Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN
TH Myers, BL VanMil, LJ Holbert, CY Peng, CD Stinespring, J Alam, ...
Journal of crystal growth 246 (3-4), 244-251, 2002
232002
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