Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition S Tsukamoto, Y Nagamune, M Nishioka, Y Arakawa
Journal of applied physics 71 (1), 533-535, 1992
231 1992 Photoluminescence spectra and anisotropic energy shift of GaAs quantum wires in high magnetic fields Y Nagamune, Y Arakawa, S Tsukamoto, M Nishioka, S Sasaki, N Miura
Physical review letters 69 (20), 2963, 1992
175 1992 New Structure Model for the G a A s (001)− c (4× 4) Surface A Ohtake, J Nakamura, S Tsukamoto, N Koguchi, A Natori
Physical review letters 89 (20), 206102, 2002
137 2002 Fabrication of GaAs quantum wires (∼ 10 nm) by metalorganic chemical vapor selective deposition growth S Tsukamoto, Y Nagamune, M Nishioka, Y Arakawa
Applied physics letters 63 (3), 355-357, 1993
105 1993 Fabrication of InGaAs quantum dots on GaAs (0 0 1) by droplet epitaxy T Mano, K Watanabe, S Tsukamoto, H Fujioka, M Oshima, N Koguchi
Journal of Crystal Growth 209 (2-3), 504-508, 2000
96 2000 New self-organized growth method for InGaAs quantum dots on GaAs (001) using droplet epitaxy T Mano, K Watanabe, S Tsukamoto, H Fujioka, M Oshima, N Koguchi
Japanese journal of applied physics 38 (9A), L1009, 1999
93 1999 Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy T Mano, K Watanabe, S Tsukamoto, N Koguchi, H Fujioka, M Oshima, ...
Applied Physics Letters 76 (24), 3543-3545, 2000
83 2000 GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth Y Nagamune, M Nishioka, S Tsukamoto, Y Arakawa
Applied physics letters 64 (19), 2495-2497, 1994
83 1994 Narrow photoluminescence linewidth T Yang, J Tatebayashi, S Tsukamoto, M Nishioka, Y Arakawa
Applied physics letters 84 (15), 2817-2819, 2004
80 2004 Fabrication of GaAs arrowhead‐shaped quantum wires by metalorganic chemical vapor deposition selective growth S Tsukamoto, Y Nagamune, M Nishioka, Y Arakawa
Applied physics letters 62 (1), 49-51, 1993
79 1993 Conductance of single thiolated poly (GC)-poly (GC) DNA molecules MS Xu, S Tsukamoto, S Ishida, M Kitamura, Y Arakawa, RG Endres, ...
Applied Physics Letters 87 (8), 2005
74 2005 Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy K Watanabe, S Tsukamoto, Y Gotoh, N Koguchi
Journal of crystal growth 227, 1073-1077, 2001
68 2001 Atomistic insights for InAs quantum dot formation on GaAs (001) using STM within a MBE growth chamber S Tsukamoto, T Honma, GR Bell, A Ishii, Y Arakawa
Small 2 (3), 386-389, 2006
67 2006 Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates JE Oh, PK Bhattacharya, YC Chen, S Tsukamoto
Journal of Applied Physics 66 (8), 3618-3621, 1989
65 1989 High density InAs∕ GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition D Guimard, M Nishioka, S Tsukamoto, Y Arakawa
Applied physics letters 89 (18), 2006
62 2006 Growth process and mechanism of nanometer-scale GaAs dot-structures using MOCVD selective growth Y Nagamune, S Tsukamoto, M Nishioka, Y Arakawa
Journal of crystal growth 126 (4), 707-717, 1993
62 1993 Atomic-level in situ real-space observation of Ga adatoms on GaAs (0 0 1)(2× 4)-As surface during molecular beam epitaxy growth S Tsukamoto, N Koguchi
Journal of crystal growth 201, 118-123, 1999
52 1999 Observation of sulfur‐terminated GaAs (001)‐(2× 6) reconstruction by scanning tunneling microscopy S Tsukamoto, N Koguchi
Applied physics letters 65 (17), 2199-2201, 1994
49 1994 1.55 μm emission from InAs∕ GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation D Guimard, S Tsukamoto, M Nishioka, Y Arakawa
Applied physics letters 89 (8), 2006
46 2006 Ground state lasing at 1.34 μm from InAs∕ GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition D Guimard, Y Arakawa, M Ishida, S Tsukamoto, M Nishioka, Y Nakata, ...
Applied physics letters 90 (24), 2007
44 2007 