| Superior Surface Transfer Doping of Diamond with MoO3 M Tordjman, C Saguy, A Bolker, R Kalish Advanced Materials Interfaces, 2014 | 65 | 2014 |
| Boosting surface charge-transfer doping efficiency and robustness of diamond with WO3 and ReO3 M Tordjman, K Weinfeld, R Kalish Applied Physics Letters 111, 111601, 2017 | 54 | 2017 |
| Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond Z Yin & M Tordjman, Y Lee, A Vardi, R Kalish, JA del Alamo Science Advances 4 (9), eaau0480, 2018 | 51 | 2018 |
| A Diamond:H/MoO3 MOSFET A Vardi, M Tordjman, JA del Alamo, R Kalish IEEE Electron Device Letters 35 (12), 1320-1322, 2014 | 41 | 2014 |
| A Diamond:H/WO3Metal–Oxide–Semiconductor Field-Effect Transistor Z Yin, M Tordjman, A Vardi, R Kalish, JA del Alamo IEEE Electron Device Letters 39 (4), 540-543, 2018 | 34 | 2018 |
| A Diamond: H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor Z Yin & M Tordjman, A Vardi, R Kalish, JA del Alamo IEEE Electron Device Letters, 2018 | 34 | 2018 |
| Quantum confinement and Coulomb blockade in isolated nanodiamond crystallites A Bolker, C Saguy, M Tordjman, R Kalish Physical Review B 88 (3), 035442, 2013 | 26 | 2013 |
| The effect of grain boundaries and adsorbates on the electrical properties of hydrogenated ultra nano crystalline diamond L Gan, A Bolker, C Saguy, R Kalish, DL Tan, BK Tay, D Gruen, P Bruno Diamond and related materials 18 (9), 1118-1122, 2009 | 26 | 2009 |
| Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope G Naresh‐Kumar, B Hourahine, A Vilalta‐Clemente, P Ruterana, ... physica status solidi (a) 209 (3), 424-426, 2012 | 25 | 2012 |
| Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques A Bolker, C Saguy, R Kalish Nanotechnology 25 (38), 385702, 2014 | 23 | 2014 |
| Two-dimensional and zero-dimensional quantization of transfer-doped diamond studied by low-temperature scanning tunneling spectroscopy A Bolker, C Saguy, M Tordjman, L Gan, R Kalish Physical Review B 83 (15), 155434, 2011 | 16 | 2011 |
| Temperature dependence of reversible switch-memory in electron field emission from ultrananocrystalline diamond M Tordjman, A Bolker, C Saguy, R Kalish Applied Physics Letters 101 (17), 2012 | 12 | 2012 |
| A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors YT Lee, A Vardi, M Tordjman Applied Physics Letters 117 (20), 2020 | 10 | 2020 |
| Refractory W Ohmic Contacts to H-Terminated Diamond A Vardi, M Tordjman, R Kalish, JA del Alamo IEEE Transactions on Electron Devices, 10.1109/TED.2020.3009174, 2020 | 10 | 2020 |
| Diamond electronics with high carrier mobilities M Tordjman Nature Electronics 5, 21-22, 2022 | 6 | 2022 |
| Reversible Switch Memory Effect in Hydrogen‐Terminated Ultrananocrystalline Diamond M Tordjman, A Bolker, C Saguy, E Baskin, P Bruno, DM Gruen, R Kalish Advanced Functional Materials 22 (9), 1827-1834, 2012 | 6 | 2012 |
| Molybdenum trioxide-coated hydrogen-terminated diamond surface and uses thereof R Kalish, M Tordjman, T Research, DF Ltd. US Patent App. 14/261,364, 2013 | 4 | 2013 |
| Transition-metal oxides-coated hydrogen-terminated diamond surface and uses thereof R Kalish, M Tordjman US Patent 11,450,744, 2022 | 2 | 2022 |
| Non-volatile resonance modes of a photonic cavity in diamond produced by fine-tuning A Lozovik, M Tordjman, B Meyler, I Bayn, J Salzman, R Kalish Journal of Applied Physics 120 (16), 2016 | 2 | 2016 |
| Field emission device and method of fabricating the same R Kalish, M Tordjman US Patent 9,306,167, 2016 | 2 | 2016 |
