Santosh Raghavan
Santosh Raghavan
E-mail confirmado em mrl.ucsb.edu
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High-mobility BaSnO3 grown by oxide molecular beam epitaxy
S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer
Apl Materials 4 (1), 016106, 2016
1682016
Long-term retention in organic ferroelectric-graphene memories
S Raghavan, I Stolichnov, N Setter, JS Heron, M Tosun, A Kis
Applied Physics Letters 100 (2), 023507, 2012
672012
Symmetry lowering in extreme-electron-density perovskite quantum wells
JY Zhang, J Hwang, S Raghavan, S Stemmer
Physical review letters 110 (25), 256401, 2013
652013
Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate
P Moetakef, JY Zhang, S Raghavan, AP Kajdos, S Stemmer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31 (4 …, 2013
602013
Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO 3 quantum wells
JY Zhang, CA Jackson, R Chen, S Raghavan, P Moetakef, L Balents, ...
Physical Review B 89 (7), 075140, 2014
562014
Direct Observation of Sr Vacancies in by Quantitative Scanning Transmission Electron Microscopy
H Kim, JY Zhang, S Raghavan, S Stemmer
Physical Review X 6 (4), 041063, 2016
492016
Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy
T Schumann, S Raghavan, K Ahadi, H Kim, S Stemmer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (5 …, 2016
482016
Carrier density independent scattering rate in SrTiO 3-based electron liquids
E Mikheev, S Raghavan, JY Zhang, PB Marshall, AP Kajdos, L Balents, ...
Scientific reports 6 (1), 1-8, 2016
452016
Conduction band edge effective mass of La-doped BaSnO3
S James Allen, S Raghavan, T Schumann, KM Law, S Stemmer
Applied Physics Letters 108 (25), 252107, 2016
422016
Ferroelectric transition in compressively strained SrTiO3 thin films
A Verma, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 107 (19), 192908, 2015
412015
APL Mater. 4, 016106 (2016)
S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer
41
Probing the Metal-Insulator Transition in by Electrostatic Doping
S Raghavan, JY Zhang, OF Shoron, S Stemmer
Physical review letters 117 (3), 037602, 2016
322016
Magnetism and local structure in low-dimensional Mott insulating GdTiO 3
JY Zhang, CA Jackson, S Raghavan, J Hwang, S Stemmer
Physical Review B 88 (12), 121104, 2013
282013
Two-dimensional electron liquid at the (111) SmTiO3/SrTiO3 interface
S Raghavan, JY Zhang, S Stemmer
Applied Physics Letters 106 (13), 132104, 2015
272015
Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation
A Verma, S Raghavan, S Stemmer, D Jena
Applied Physics Letters 105 (11), 113512, 2014
262014
BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors
SS Omor F Shoron, Santosh Raghavan, Christopher R Freeze
Applied Physics Letters 110 (23), 232902, 2017
232017
Determination of the Mott-Hubbard gap in GdTiO3
CGVW L. Bjaalie, A. Verma, B. Himmetoglu, A. Janotti, S. Raghavan, V ...
PRB 92, 085111, 2015
19*2015
Subband structure of two-dimensional electron gases in SrTiO3
S Raghavan, S James Allen, S Stemmer
Applied Physics Letters 103 (21), 212103, 2013
162013
Pseudogaps and Emergence of Coherence in Two-Dimensional Electron Liquids in
PB Marshall, E Mikheev, S Raghavan, S Stemmer
Physical review letters 117 (4), 046402, 2016
152016
Adsorbate-localized states at water-covered (100) surfaces
S Raghavan, A Carvalho, F Le Formal, N Setter, S Öberg, PR Briddon
Applied physics letters 98 (1), 012106, 2011
92011
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