| Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers V Lebedev, V Cimalla, T Baumann, O Ambacher, FM Morales, JG Lozano Journal of applied physics 100 (9), 2006 | 101 | 2006 |
| Determination of the composition of InxGa1− xN from strain measurements FM Morales, D González, JG Lozano, R García, S Hauguth-Frank, ... Acta Materialia 57 (19), 5681-5692, 2009 | 92 | 2009 |
| Microstructural and thermodynamic study of γ-Ga2O3 M Zinkevich, F Miguel Morales, H Nitsche, M Ahrens, M Rühle, F Aldinger International Journal of Materials Research 95 (9), 756-762, 2022 | 82 | 2022 |
| Model for the thickness dependence of electron concentration in InN films V Cimalla, V Lebedev, FM Morales, R Goldhahn, O Ambacher Applied physics letters 89 (17), 2006 | 78 | 2006 |
| Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ... Journal of applied physics 100 (9), 2006 | 65 | 2006 |
| The role of Si as surfactant and donor in molecular-beam epitaxy of AlN V Lebedev, FM Morales, H Romanus, S Krischok, G Ecke, V Cimalla, ... Journal of applied physics 98 (9), 2005 | 54 | 2005 |
| Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range P Aseev, PED Rodriguez, VJ Gómez, JM Mánuel, FM Morales, ... Applied Physics Letters 106 (7), 2015 | 52 | 2015 |
| QNMs of branes, BHs and fuzzballs from quantum SW geometries M Bianchi, D Consoli, A Grillo, F Morales Physics Letters B 824, 136837, 2022 | 44 | 2022 |
| Characterization of TiO2 deposited on textured silicon wafers by atmospheric pressure chemical vapour deposition B Vallejo, M Gonzalez-Mañas, J Martínez-López, F Morales, ... Solar Energy Materials and Solar Cells 86 (3), 299-308, 2005 | 44 | 2005 |
| Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN JM Mánuel, FM Morales, JG Lozano, D González, R García, T Lim, ... Acta Materialia 58 (12), 4120-4125, 2010 | 43 | 2010 |
| Coalescence aspects of III-nitride epitaxy V Lebedev, K Tonisch, F Niebelschütz, V Cimalla, D Cengher, I Cimalla, ... Journal of Applied Physics 101 (5), 2007 | 42 | 2007 |
| Ch. Y. Wang, V. Cimalla, and O. Ambacher JG Lozano, FM Morales, R García, D González, V Lebedev Appl. Phys. Lett 90, 091901, 2007 | 39 | 2007 |
| Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si (111) C Zgheib, LE McNeil, M Kazan, P Masri, FM Morales, O Ambacher, ... Applied Physics Letters 87 (4), 2005 | 38 | 2005 |
| Phase equilibria in the ZrO2–GdO1. 5 system at 1400–1700° C M Zinkevich, C Wang, FM Morales, M Rühle, F Aldinger Journal of alloys and compounds 398 (1-2), 261-268, 2005 | 36 | 2005 |
| Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys FM Morales, JM Mánuel, R García, B Reuters, H Kalisch, A Vescan Journal of Physics D: Applied Physics 46 (24), 245502, 2013 | 33 | 2013 |
| Growth mechanism and electronic properties of epitaxial In2O3 films on sapphire CY Wang, L Kirste, FM Morales, JM Mánuel, CC Röhlig, K Köhler, ... Journal of Applied Physics 110 (9), 2011 | 30 | 2011 |
| Formation of discontinuous Al2O3 layers during high-temperature oxidation of RuAl alloys PJ Bellina, A Catanoiu, FM Morales, M Rühle Journal of Materials Research 21 (1), 276-286, 2006 | 30 | 2006 |
| Direct measurement of polarization-induced fields in GaN/AlN by nano-beam electron diffraction D Carvalho, K Müller-Caspary, M Schowalter, T Grieb, T Mehrtens, ... Scientific reports 6 (1), 28459, 2016 | 29 | 2016 |
| Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy JM Manuel, FM Morales, R García, R Aidam, L Kirste, O Ambacher Journal of crystal growth 357, 35-41, 2012 | 29 | 2012 |
| Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates BP Falcão, JP Leitão, MR Correia, MR Soares, FM Morales, JM Mánuel, ... Journal of Applied Physics 114 (18), 2013 | 28 | 2013 |
Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgE-mail confirmado em inatech.uni-freiburg.de
