Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon JJ Kopanski, JF Marchiando, JR Lowney
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
152 1996 Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ...
ACS applied materials & interfaces 7 (2), 1180-1187, 2015
122 2015 Calibrated nanoscale dopant profiling using a scanning microwave microscope HP Huber, I Humer, M Hochleitner, M Fenner, M Moertelmaier, C Rankl, ...
Journal of Applied Physics 111 (1), 2012
120 2012 Characterization of two‐dimensional dopant profiles: Status and review AC Diebold, MR Kump, JJ Kopanski, DG Seiler
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
119 1996 Thermal oxidation of 3C silicon carbide single‐crystal layers on silicon CD Fung, JJ Kopanski
Applied physics letters 45 (7), 757-759, 1984
106 1984 Two‐dimensional scanning capacitance microscopy measurements of cross‐sectioned very large scale integration test structures G Neubauer, A Erickson, CC Williams, JJ Kopanski, M Rodgers, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
102 1996 Method and reference standards for measuring overlay in multilayer structures, and for calibrating imaging equipment as used in semiconductor manufacturing MW Cresswell, RA Allen, JJ Kopanski, LW Linholm
US Patent 5,617,340, 1997
91 1997 Precise alignment of single nanowires and fabrication of nanoelectromechanical switch and other test structures Q Li, SM Koo, CA Richter, MD Edelstein, JE Bonevich, JJ Kopanski, ...
IEEE Transactions on Nanotechnology 6 (2), 256-262, 2007
76 2007 Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions JJ Kopanski, JF Marchiando, DW Berning, R Alvis, HE Smith
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
63 1998 Silicon nanowire on oxide/nitride/oxide for memory application Q Li, X Zhu, HD Xiong, SM Koo, DE Ioannou, JJ Kopanski, JS Suehle, ...
Nanotechnology 18 (23), 235204, 2007
61 2007 Boron‐implanted 6H‐SiC diodes M Ghezzo, DM Brown, E Downey, J Kretchmer, JJ Kopanski
Applied physics letters 63 (9), 1206-1208, 1993
59 1993 Model database for determining dopant profiles from scanning capacitance microscope measurements JF Marchiando, JJ Kopanski, JR Lowney
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
55 1998 Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions A Erickson, L Sadwick, G Neubauer, J Kopanski, D Adderton, M Rogers
Journal of electronic materials 25, 301-304, 1996
55 1996 Scanning capacitance microscopy applied to two-dimensional dopant profiling of semiconductors JJ Kopanski, JF Marchiando, JR Lowney
Materials Science and Engineering: B 44 (1-3), 46-51, 1997
52 1997 Ultrahigh-temperature microwave annealing of Al+-and P+-implanted 4H-SiC SG Sundaresan, MV Rao, Y Tian, MC Ridgway, JA Schreifels, ...
Journal of applied physics 101 (7), 2007
47 2007 Carrier concentration dependence of the scanning capacitance microscopy signal in the vicinity of junctions JJ Kopanski, JF Marchiando, BG Rennex
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
45 2000 Factors influencing the capacitance–voltage characteristics measured by the scanning capacitance microscope GH Buh, JJ Kopanski, JF Marchiando, AG Birdwell, Y Kuk
Journal of applied physics 94 (4), 2680-2685, 2003
44 2003 Behavior of inversion layers in 3C silicon carbide RE Avila, JJ Kopanski, CD Fung
Applied physics letters 49 (6), 334-336, 1986
41 1986 Specific contact resistivity of metal-semiconductor contacts-a new, accurate method linked to spreading resistance GP Carver, JJ Kopanski, DB Novotny, RA Forman
IEEE transactions on electron devices 35 (4), 489-497, 1988
34 1988 Regression procedure for determining the dopant profile in semiconductors from scanning capacitance microscopy data JF Marchiando, JJ Kopanski
Journal of applied physics 92 (10), 5798-5809, 2002
32 2002