High power LEDs–technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
320 2002 Indium gallium nitride smoothing structures for III-nitride devices WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman
US Patent 6,635,904, 2003
292 2003 Indium gallium nitride smoothing structures for III-nitride devices WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman
US Patent 6,489,636, 2002
230 2002 Performance of high‐power III‐nitride light emitting diodes G Chen, M Craven, A Kim, A Munkholm, S Watanabe, M Camras, W Götz, ...
physica status solidi (a) 205 (5), 1086-1092, 2008
198 2008 Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ...
Integrated Optoelectronic Devices 2004, 20-25, 2004
186 2004 Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ...
Applied physics letters 82 (14), 2221-2223, 2003
183 2003 Dislocation dynamics in relaxed graded composition semiconductors EA Fitzgerald, AY Kim, MT Currie, TA Langdo, G Taraschi, MT Bulsara
Materials Science and Engineering: B 67 (1), 53-61, 1999
174 1999 Performance of high-power AlInGaN light emitting diodes AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ...
physica status solidi(a) 188 (1), 15-21, 2001
171 2001 Dislocation glide and blocking kinetics in compositionally graded SiGe/Si CW Leitz, MT Currie, AY Kim, J Lai, E Robbins, EA Fitzgerald, MT Bulsara
Journal of Applied Physics 90 (6), 2730-2736, 2001
116 2001 Local indium segregation and bang gap variations in high efficiency green light emitting InGaN/GaN diodes JR Jinschek, R Erni, NF Gardner, AY Kim, C Kisielowski
Solid state communications 137 (4), 230-234, 2006
76 2006 Local indium segregation and band structure in high efficiency green light emitting InGaN/GaN diodes JR Jinschek, R Erni, NF Gardner, AY Kim, C Kisielowski
Lawrence Berkeley National Laboratory, 2004
76 * 2004 Method of producing device quality (Al) InGaP alloys on lattice-mismatched substrates AY Kim, EA Fitzgerald
US Patent 6,805,744, 2004
73 2004 III-Nitride light emitting devices with low driving voltage W Goetz, NF Gardner, RS Kern, AY Kim, A Munkholm, SA Stockman, ...
US Patent 6,630,692, 2003
68 2003 Evolution of microstructure and dislocation dynamics in graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality … AY Kim, WS McCullough, EA Fitzgerald
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
67 1999 Growth of III-nitride light emitting devices on textured substrates AY Kim, SA Maranowski
US Patent 7,633,097, 2009
41 2009 Green phosphor-converted LED R Mueller-Mach, GO Mueller, TA Trottier, MR Krames, A Kim, ...
International Symposium on Optical Science and Technology, 131-136, 2002
29 2002 Current dependence of in-plane electroluminescence distribution of InxGa1-xN/GaN multiple quantum well light emitting diodes H Itoh, S Watanabe, M Goto, N Yamada, M Misra, AY Kim, SA Stockman
Japanese journal of applied physics 42 (10B), L1244, 2003
24 2003 Letters-Semiconductors-Current Dependence of In-Plane Electroluminescence Distribution of InxGa1-xN/GaN Multiple Quantum Well Light Emitting Diodes H Itoh, S Watanabe, M Goto, N Yamada, M Misra, AY Kim, SA Stockman
Japanese Journal of Applied Physics-Part 2 Letters 42 (10), L1244, 2003
24 * 2003 Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering LM McGill, EA Fitzgerald, AY Kim, JW Huang, SS Yi, PN Grillot, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
16 2004 Visible light-emitting diodes grown on optimized∇ x [InxGa1− x] P/GaP epitaxial transparent substrates with controlled dislocation density AY Kim, ME Groenert, EA Fitzgerald
Journal of electronic materials 29 (8), L9-L12, 2000
12 2000